Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 5

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Magnetic Phase Diagram of Zinc-Blende Cd_{1-x}Mn_{x}Se

100%
EN
The paper reports first magnetic measurements performed on MBE grown epilayers of zinc-blende Cd_{1-x}Mn_{x}Se. For all samples studied in the concentration range 0.24 < x < 0.63 we find at low temperatures a history-dependent magnetic response, suggesting a transition to a spin-glass-like state. The central result of the paper is the presentation of a new, complete magnetic phase diagram for this material.
EN
Conduction and valence band edges in diluted magnetic semiconductors undergo enormous Zeeman shifts when a magnetic field is applied, reach­ing values in excess of 100 meV at low temperatures. These Zeeman shifts can thus have profound consequences on the properties of DMS/non-DMS heterostructures, since they provide the opportunity of tuning their band alignment by varying an applied field. This leads to a variety of entirely new effects, and also provides a powerful tool for probing the effect of band alignment on the properties of semiconductor heterostructures in general. We illustrate this with several examples. First, using the ZnSe/ZnMnSe sys­tem, we discuss the creation of a spatial spin modulation (spin superlattice). Second, we use the drastic differences in the Zeeman splitting occurring in different layers of a DMS/non-DMS superlattice in order to pinpoint the localization in space of the specific electronic states involved in optical tran­sitions. We illustrate this by investigating the localization of above-barrier states in type-I ZnSe/ZnMnSe superlattices, and of spatially-direct (type-I) excitons which occur in ZnTe/CdMnSe and ZnMnTe/CdSe type-II super-lattices. Finally, we exploit Zeeman tuning to demonstrate the confinement effects which occur in a single quantum barrier.
EN
We describe experiments which study static and dynamic aspects of Mn spin organization in magnetic semiconductor superlattices and quantum wells. Neutron diffraction studies of ZnSe/MnSe and ZnTe/MnSe superlattices show how static Mn spin organization in these antiferromagnetic layers may be modified by strain and lowered dimensionality. We also use a novel form of femtosecond magnetic spectroscopy to examine magnetic polaron dynamics in diluted magnetic semiconductor quantum wells, and show how the organization of Mn spins by a spin-polarized carrier population may be directly viewed in the time domain.
EN
We explore the possibility of using electron paramagnetic resonance (EPR) of Mn^{++} for measuring uniaxial strain in II-VI superlattices. This work is motivated by the fact that the EPR spectrum of Mn^{++} is very strongly affected by crystalline fields. Changes in a crystalline field which arise from strain are thus automatically expected to have a profound effect on the EPR spectrum. Consistent with this expectation, we have observed giant crystal field splittings of Mn^{++} EPR lines in ZnTe/MnTe, CdTe/MnTe, and ZnTe/MnSe superlattices. The EPR spectra observed in these systems are ascribed to isolated Mn^{++} ions diffused into the ZnTe or the CdTe layers from the respective MnTe or MnSe layers. In addition to providing precise information oii the magnitude and the sign of strain produced by lattice mis­match between the superlattice constituents, we show that the EPR spec­trum also provides a direct measure of strain fluctuations in the layered medium.
EN
We studied the effect of the donor doping of ZnSe films on their photoluminescence properties. The samples were doped during the molecular beam epitaxy growth, either with gallium or with chlorine. As the dopant concen­tration dose increases, the intensity of the band-edge emission first saturates, and then quenches in favor of the deep-level photoluminescence band. The main effect of donor doping on photoluminescence is a strong increase in intensity of the donor-bound exciton line, referred to as I_{2}. For Ga-doped films deep-band emission is much stronger, and the I_{2}-line is slightly weaker than for Cl-doped films with comparable doping level. The results confirm the superiority of chlorine over gallium as an n-type dopant in ZnSe. We dis­cuss the photoluminescence results and relate them to deep level transient spectroscopy data obtained on the same samples.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.