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EN
Resistance changes in thin electrically nonhomogeneous La_{0.67}Ca_{0.33}MnO_3 films were investigated using electrical pulses of nanosecond duration in the 80-300 K temperature range. Two types of reversible switching to higher resistive states with different starting temperature induced by series of the positive pulses were observed. Possible mechanisms of the resistance switching by short electrical pulses in the vicinity of T_m and at 80-90 K are discussed.
EN
The resistance, magnetoresistance, and resistance response under microwave irradiation (f=10 and 35 GHz) were measured for epitaxial and polycrystalline La_{0.67}Ca_{0.33}MnO_3 and La_{0.67}Sr_{0.33}MnO_3 thin films in the temperature range 78÷300 K. The microwave induced resistance increase observed for the epitaxial films in a narrow temperature range below the ferromagnetic to paramagnetic transition temperature T_c certifies coexistence of low resistance (ferromagnetic) and high resistance (paramagnetic) regions in the manganites. Resistance of polycrystalline films decreased under microwave irradiation in a wide temperature range below T_c. The effect was explained in terms of microwave assisted hopping of carriers in high resistance regions formed at grain boundaries of the polycrystalline films.
EN
Current and electrical field-induced electroresistive effects were investigated for La_{0.67}Ca_{0.33}MnO_3/MgO thin films demonstrating nanosized electrical inhomogeneities. Two different models based on enhanced conductivity of intergrain boundaries by injecting spin-polarized carriers from ferromagnetic grains and electrical field-enhanced hopping of carriers in high resistance intergrain media were carried out to explain nonlinear electrical properties of the films.
EN
We present new experimental evidence indicating the importance of magnetic field component of microwave field (f=9.4 GHz) for magnetoresistive properties of polycrystalline La_{0.7}Ca_{0.3}MnO_3 films. The microwave measurements revealed a different character of the temperature-dependent electrical resistance of polycrystalline La_{0.7}Ca_{0.3}MnO_3 films placed in the centre (maximal amplitude of H_{10} wave vector) and at a narrow wall of the wave-guide (reduced H_{10} amplitude). Theoretical estimations of the influence of substrate onto distribution of microwave electric and magnetic fields in the waveguide were performed using the finite-difference time-domain method.
EN
Influence of strong electric field in wide frequency range (from DC to 35 GHz) on electrical resistance of thin La_{0.67}Ca_{0.33}MnO_3 polycrystalline manganite films was investigated in the range of (78÷300) K. Different behavior of resistance change vs. temperature was observed when pulsed DC electric field and microwaves were applied to the films. When pulsed DC electric field is applied the electric-field-induced resistance change ("electroresistance") of manganite film depended nearly monotonically on temperature. However, in microwave electric fields a non-monotonic character of the electroresistance temperature dependence was observed. The dependence of the electroresistance on quality of manganite films was observed in case of microwaves. The experimental findings are explained assuming different electrical current mechanisms in case of DC and microwave fields. The applied voltage drops mainly across the grains of polycrystalline film due to a presence of displacement currents in case of microwaves, whereas in DC case the voltage drop is across the grain boundaries.
EN
Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of Al_xGa_{1-x}As ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of Al_xGa_{1-x}As which was monitored by photoluminescence technique.
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