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Hopping Excitons in GaInNAs - Simulation οf Micro- and Macrophotoluminescence Spectra

100%
Baranowski M., Latkowska M., Kudrawiec R., Misiewicz J.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
899-901
EN
Model of hopping excitons has been applied to explain the origin of sharp lines observed in microphotoluminescence spectra of GaInNAs layers. It has been shown that shape of the micro- and macrophotoluminescence spectra results from the exciton hopping between localizing centers and this phenomenon is responsible for the observation of sharp lines in microphotoluminescence experiment. In addition, the influence of different model parameters on photoluminescence spectra and their characteristic parameters such as the Stokes shift and full width at half maximum has been investigated.
2
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Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells

88%
Baranowski M., Kudrawiec R., Latkowska M., Syperek M., Misiewicz J.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1022-1025
EN
Model of hopping excitons is applied to study the carrier dynamics in GaInNAs/GaAs quantum well system. Impact of parameters describing localizing states (i.e., an average energy and density) on carrier dynamics in GaInNAs material is investigated theoretically. It is shown how those parameters affect the quantities that can be extracted from time resolved photoluminescence experiments. It is shown that obtained simulations can be very helpful in the interpretation of the experimental data.
3
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Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence

76%
Kudrawiec R., Latkowska M., Sęk G., Misiewicz J., Ibáñez J., Henini M., Hopkinson M.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
930-932
EN
GaInNAs bulk-like layers ( ≈ 20% In and ≈ 3% N) grown on GaAs substrate with various crystallographic orientations have been studied by micro-photoluminescence at low temperatures for a broad range of excitation conditions. In addition to photoluminescence peaks, which are associated with heavy- and light-hole free exciton recombination, a band of sharp lines was observed below the fundamental free exciton transition at low excitation. It shows that the localized emission which is typical of this alloy at low temperatures is composed of individual narrow photoluminescence lines which are associated with the recombination of single excitons. They can be localized on various local potential minima including those originating from the alloy content fluctuations and/or deep acceptor(donor)-like complexes.
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