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Optically Detected Magnetic Resonance Studies of Te-Related Shallow Donors in Al_{x}Ga_{1-x}As

100%
Godlewski M., Fronc K., Chen W., Monemar B.
Acta Physica Polonica A
|
1991
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vol. 80
|
issue 3
341-344
EN
The first studies of the Optically Detected Magnetic Resonance (ODMR) of Te-doped (x = 0.42) are presented. The ODMR data indicate an efficient energy transfer between epilayer and GaAs substrate.
2
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Defects in Dilute Nitrides

100%
Chen W., Buyanova I., Tu C., Yonezu H.
Acta Physica Polonica A
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2005
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vol. 108
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issue 4
571-579
EN
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As_a antisites and Ga_i self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.
3
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Impact Ionization Driven Chaotic Photoluminescence Oscillations in Ga_{0.47}In_{0.53}As

88%
Godlewski M., Fronc K., Gajewska M., Chen W., Monemar B.
Acta Physica Polonica A
|
1991
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vol. 80
|
issue 2
271-274
EN
A new application of the Optically Detected Cyclotron Resonance (ODCR) is presented. We report impact ionization studies of bound exciton: (BE) and shallow donor related recombination processes in Ga_{0.47}In_{0.53}As. An appearance of chaotic oscillations in photoluminescence (PL) intensity is observed under condition of impact ionization of deeper donors.
4
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AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures

88%
Karpińska K., Godlewski M., Żytkiewicz Z., Chen W., Weber E.
Acta Physica Polonica A
|
1992
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vol. 82
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issue 4
713-716
EN
The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate. These results indicate an efficient energy transfer from excited AlGaAs to GaAs.
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