Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the first time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin films onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology of the obtained films was studied by means of atomic force microscopy. From the X-ray diffraction result it is shown that the CdO film is polycrystalline with cubic structure. The mechanisms of current transport through the space-charge region under forward and back biases were established by investigation of temperature dependences of the I-V characteristics. The main photoelectric parameters and the photosensitivity spectra were measured at room temperature.
We have fabricated photosensitive anisotype n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions by a deposition of Cd_{0.5}Zn_{0.5}O film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.
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