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Structural, morphology and electrical properties of layered copper selenide thin film

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Ying Chyi Liew J., Talib Z., Mahmood W., Yunus M., Zainal Z., Halim S., Moksin M., Yusoff W., Pah Lim K.

Open Physics

2009

vol. 7

issue 2

379-384

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

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1 Open Physics

1 2009

1 Halim S.

1 Mahmood W.

1 Moksin M.

1 Pah Lim K.

1 Talib Z.

1 Ying Chyi Liew J.

1 Yunus M.

1 Yusoff W.

1 Zainal Z.

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Structural, morphology and electrical properties of layered copper selenide thin film