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Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers

100%

Maoudj M., Bouhafs D., Bourouba N., Khelifati N., El Amrani A., Boufnik R., Hamida Ferhat A.

Acta Physica Polonica A

2017

vol. 132

issue 3

725-727

In this study we conducted thermal oxidation of Czochralski p-type <100> silicon wafers. The oxidation was carried out at temperatures in the range of 850-1000°C, in a gas mixture of N₂:O₂, in order to deposit a thin layer (10 nm) of thermal silicon dioxide (SiO₂), generally used in the surface passivation of solar cells. The measurements of effective minority carriers lifetime τ_{eff} using the quasi-steady-state photoconductance have shown degradation of different samples after oxidation process. The calculation of surface recombination velocity after the oxidation process at different temperatures, gave the same value of 40 cm s¯¹, showing a low surface recombination velocity and, therefore, a good surface passivation. Finally, a study based on sample illumination technique, allowed us to conclude that our samples are dominated by bulk Shockley-Read-Hall recombination, caused by Fe-related centers, thereby causing the degradation of the lifetime of minority carriers.

Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments

68%

Andreev D., Bondarenko G., Andreev V., Maslovsky V., Stolyarov A.

Acta Physica Polonica A

2017

vol. 132

issue 2

245-248

Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO_2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.

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2 Acta Physica Polonica A

2 2017

1 Andreev D.

1 Andreev V.

1 Bondarenko G.

1 Boufnik R.

1 Bouhafs D.

1 Bourouba N.

1 El Amrani A.

1 Hamida Ferhat A.

1 Khelifati N.

1 Maoudj M.

1 Maslovsky V.

1 Stolyarov A.

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Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers

Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments