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1
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A New Type of Semi-Insulating Materials

100%
Leon R., Weber E.
Acta Physica Polonica A
|
1992
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vol. 82
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issue 4
664-669
EN
The introduction of Cu in InP at 700°C and higher temperatures results in both initially p-type and n-type InP become semi-insulating. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. The buried Schottky barrier model is the only model thus far studied which is consistent with these experimental observations. This model has general applicability, and its possible relevance to other semiconductors is examined. The conditions necessary for forming quasi-intrinsic semiconductors by metallic precipitation are discussed.
2
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Deep Defects in Low-Temperature GaAs

81%
Korona K., Muszalski J., Kamińska M., Weber E.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 5
821-824
EN
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
3
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AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures

71%
Karpińska K., Godlewski M., Żytkiewicz Z., Chen W., Weber E.
Acta Physica Polonica A
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1992
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vol. 82
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issue 4
713-716
EN
The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate. These results indicate an efficient energy transfer from excited AlGaAs to GaAs.
4
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FFirst TSC and DLTS Measurements of Low Temperature GaAs

61%
Muszalski J., Babiński A., Korona K., Kamińska E., Piotrowska A., Kamińska M., Weber E.
Acta Physica Polonica A
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1991
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vol. 80
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issue 3
413-416
EN
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
5
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Optical and Electrical Measurements of Low-Temperature InAlAs

61%
Korona K., Wysmołek A., Bożek R., Kamińska M., Baranowski J., Weber E.
Acta Physica Polonica A
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1992
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vol. 82
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issue 5
825-828
EN
Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In_{0.52}Al_{0.48}As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
6
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Superconductivity in Indium Diffused GaAs

52%
Baranowski J., Wójcik P., Palczewska M., Jabłoński R., Weber E., Yau W., Sohn H., Werner P.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 4
670-673
EN
Superconductivity of indium diffused GaAs was investigated. The superconductivity in these samples was identified by the magnetic susceptibility and the characteristic field modulated microwave absorption. The static magnetic susceptibility was measured from 40 K down to 2.5 K. The result shows two distinctive diamagnetic contributions within 7 K-2.5 K range. These diamagnetic contributions were correlated with the excess of In and Ga metal in GaAs.
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