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EN
Photovoltaic spectra of PbTe p-n junction have been measured in the infrared spectral region in the temperature range of 8-260 K. The p-n junctions have been formed by cadmium diffusion into the p-type PbTe crystals. From the positions of the photovoltaic maxima the energy gap of the diode material has been determined. In the presence of a magnetic field up to 7 T, a pronounced oscillatory behavior of the photovoltage was observed in the Faraday and Voigt configurations. Experiments were performed as a function of the magnetic field intensity at a constant wavelength of the incident light. The energy of the interband magnetooptical transitions between the Landau levels in PbTe was determined and compared with the theoretical model of Adler, describing the energy band structure for the IV-VI compounds.
EN
ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions were prepared by vapor-transport epitaxy of ZnTe on In-doped Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} (x = 0.05, y = 0.03) single crystalline substrate in vacuum. At temperatures lower than 120 K the infrared and red electroluminescence were observed from the ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} diode with forward current density in the range 0.003-4.0 A/cm^{2}.
EN
The resonant photoemission spectroscopy was applied to investigate the valence band electronic structure of semimagnetic semiconductor Pb_{0.92}Mn_{0.08}Se crystal and to determine the contribution of Mn 3d electrons to the valence band. The set of energy distribution curves and constant initial states spectra were taken for by energies in the region (40-60 eV) close to the Mn 3p-3d transition. The electrons Mn 3d hybridize and contribute to the valence band electrons of the crystal and main density of states contribution appears in the energy 3.5 ± 0.2 eV below the valence band edge.
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