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  1. 3 Acta Physica Polonica A

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  1. 1 2011

  2. 1 2008

  3. 1 2005

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  1. 3 Reklaitis A.

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Efficient Terahertz Emission from InGaN/GaN Heterostructure

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Reklaitis A.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 2
212-214
EN
Terahertz emission from the freestanding InGaN/GaN heterostructure illuminated by femtosecond optical pulse is considered using Monte Carlo simulations. The results of Monte Carlo simulations show that the power of terahertz emission from InGaN/GaN heterostructure exceeds the power of the emission from InN surface by one order of magnitude.
2
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Efficiency of GaAs-Based Pulsed Terahertz Emitters

100%
Reklaitis A.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 3
903-908
EN
Terahertz emission from the electron-hole plasma excited by a femtosecond optical pulse in GaAs-based emitters is studied by the Monte Carlo simulations. The THz energy radiated from the n- and p-doped GaAs surface THz emitters, from the contactless p-i-n emitter, and from the photoconductive emitter is evaluated. The obtained results show that the THz energy radiated by the photoconductive emitter exceeds the energy radiated by the surface and p-i-n THz emitters by more than one order of magnitude.
3
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Vertical Electron Transport in GaN/AlGaN Heterostructures

100%
Reklaitis A.
Acta Physica Polonica A
|
2005
|
vol. 107
|
issue 2
261-266
EN
Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under certain composition, geometry and doping profile, the GaN/AlGaN heterostructures may become bipolar, i.e., the inversion layers may originate at heterointerfaces due to strong built-in electric fields, which are induced by polarization charges.
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