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Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decom­poses was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metalliza­tion is not a good candidate for device quality ohmic contacts to GaSb-based devices.
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