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Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview

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Martins F., Hackens B., Sellier H., Liu P., Pala M., Baltazar S., Desplanque L., Wallart X., Bayot V., Huant S.

Acta Physica Polonica A

2011

vol. 119

issue 5

569-575

This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some of its most instructive achievements found in the literature and we present an updated review of our own research. It focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. In all of the given examples, we emphasize how a local-probe approach is able to shed new, or complementary, light on transport phenomena which are usually studied by means of macroscopic conductance measurements.

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1 Acta Physica Polonica A

1 2011

1 Baltazar S.

1 Bayot V.

1 Desplanque L.

1 Hackens B.

1 Huant S.

1 Liu P.

1 Martins F.

1 Pala M.

1 Sellier H.

1 Wallart X.

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Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview