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Fabrication of Pyramid/Nanowire Binary Structure on n-Type Silicon Using Chemical Etching

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Si Ahmed Y., Hadjersi T., Chaoui R.

Acta Physica Polonica A

2016

vol. 130

issue 1

385-387

A pyramid and nanowire binary structure of n-type monocrystalline silicon surface was fabricated by two-step chemical etching process. The nanowire surface is formed by electroless etching in HF-AgNO₃ aqueous solution after being textured in KOH/IPA solution. Optical absorption was compared between this structure and that of random pyramid arrays. The effective reflectance calculated between 400 and 1100 nm decreased from ≈ 40% to ≈ 15% after pyramidal texturing and ≈ 4% after formation of vertically aligned nanowires with a length less than 1 μ m. This simple and low-cost surface structuring technique holds high potential for the manufacture of terrestrial silicon solar cells with reduced optical losses.

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1 Acta Physica Polonica A

1 2016

1 Chaoui R.

1 Hadjersi T.

1 Si Ahmed Y.

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Fabrication of Pyramid/Nanowire Binary Structure on n-Type Silicon Using Chemical Etching