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Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC

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Król K., Kwietniewski N., Gierałtowska S., Wachnicki Ł., Sochacki M.

Acta Physica Polonica A

2017

vol. 132

issue 2

329-331

The electronic properties of ZrO₂/SiO₂ stacked dielectric layers are reported as a function for temperature of the atomic layer deposition process. A dielectric layer has been characterized by C-V and I-V measurements of MIS structures. A strong dependence of κ value of ZrO₂ layer has been observed as a function of deposition temperature T. The values within the range of κ≈16-26 have been obtained. All measured stacked dielectric layers show an increase in dielectric breakdown voltage compared to simple SiO₂ dielectric by average factor of 1.7 and factor of 2 (21 MV/cm) for high-κ oxides deposited at low temperature (85°C).

Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers

100%

Maoudj M., Bouhafs D., Bourouba N., Khelifati N., El Amrani A., Boufnik R., Hamida Ferhat A.

Acta Physica Polonica A

2017

vol. 132

issue 3

725-727

In this study we conducted thermal oxidation of Czochralski p-type <100> silicon wafers. The oxidation was carried out at temperatures in the range of 850-1000°C, in a gas mixture of N₂:O₂, in order to deposit a thin layer (10 nm) of thermal silicon dioxide (SiO₂), generally used in the surface passivation of solar cells. The measurements of effective minority carriers lifetime τ_{eff} using the quasi-steady-state photoconductance have shown degradation of different samples after oxidation process. The calculation of surface recombination velocity after the oxidation process at different temperatures, gave the same value of 40 cm s¯¹, showing a low surface recombination velocity and, therefore, a good surface passivation. Finally, a study based on sample illumination technique, allowed us to conclude that our samples are dominated by bulk Shockley-Read-Hall recombination, caused by Fe-related centers, thereby causing the degradation of the lifetime of minority carriers.

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2 Acta Physica Polonica A

2 2017

1 Boufnik R.

1 Bouhafs D.

1 Bourouba N.

1 El Amrani A.

1 Gierałtowska S.

1 Hamida Ferhat A.

1 Khelifati N.

1 Król K.

1 Kwietniewski N.

1 Maoudj M.

1 Sochacki M.

1 Wachnicki Ł.

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Electronic Properties of Stacked ZrO₂ Films Fabricated by Atomic Layer Deposition on 4H-SiC

Investigation of Degradation of Electrical Properties after Thermal Oxidation of p-Type Cz-Silicon Wafers