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1
Content available remote

Application-of Quasi-Forbidden Reflections for Determination of Composition of Pseudobinary Semiconductors

100%
Bąk-Misiuk J., Paszkowicz W., Domagała J.
Acta Physica Polonica A
|
1993
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vol. 84
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issue 4
681-684
EN
An application of X-ray quasi-forbidden reflection method of composition determination for A^{II}B^{VI} pseudobinary compounds is discussed. Three typical cases of the intensity dependence on the composition, as well as the choice of the most suitable reflection are presented.
2
Content available remote

Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy

88%
Żytkiewicz Z. R., Domagała J., Bąk-Misiuk J., Dobosz D., Leszczyński M.
Acta Physica Polonica A
|
1997
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vol. 92
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issue 5
1092-1096
EN
Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.
3
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Lattice Constant of Doped Semiconductor

88%
Leszczyński M., Litwin-Staszewska E., Suski T., Bąk-Misiuk J., Domagała J.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
837-840
EN
The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si.
4
Content available remote

Composition Determination of Some A^{II}B^{VI} Ternary Semiconductors from Quasi-Forbidden Reflection Intensity

88%
Bąk-Misiuk J., Domagała J., Dynowska E., Miotkowska S., Paszkowicz W.
Acta Physica Polonica A
|
1994
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vol. 86
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issue 4
575-578
EN
The aim of the present paper is to study the possibility of application of the X-ray quasi-forbidden reflection method to the composition determination of the sphalerite-type Cd_{1-x}M_{x}Te = Mg, Zn, Mn) single crystals. The method is based on the property of quasi-forbidden reflections that their integral intensity is very sensitive to composition and weakly sensitive to crystal lattice defects. An example of application for a Cd_{1-x}Mn_{x}Te single crystal is presented.
5
Content available remote

Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation

88%
Khrupa V. I., Grigoryev D. O., Skorokhod M. Y., Datsenko L. I., Bąk-Misiuk J.
Acta Physica Polonica A
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1994
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vol. 86
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issue 4
591-597
EN
Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when the characteristic AgK_{α_{1}} line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enhancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence by single crystal spectrometer permitted to determine the mean level of crystal lattice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value was estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.
6
Content available remote

Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport

88%
Janik E., Grasza K., Mycielski A., Bąk-Misiuk J., Kachniarz J.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
785-788
EN
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition metals at the temperature far below the melting point and phase transition temperature. The large crystals of ZnMnSe, ZnFeSe, ZnNiSe and ZnFeSSe were obtained. The technological parameters and shape of the quartz reactor were chosen for growth of a large crystal by self-nucleation; the transparent quartz furnace enabled the control of nucleation by visual observation. The parameters of crystal growth were determined. The crystal quality was estimated by X-ray diffraction method. The composition of crystals was determined by electron microprobe analysis and energy dispersive X-ray fluorescence analysis.
7
Content available remote

Study of Si(111) Implanted with As Ions by X-Ray Diffraction and Grazing Incidence Methods

88%
Pełka J. B., Górecka J., Auleytner J., Domagała J., Bąk-Misiuk J.
|
EN
The Si(111) wafer cut from a bulk single crystal obtained by the Czochralski method was implanted with 5×10^{16} I cm^{-2} of As ions of energy 80 keV. The dose applied was chosen above the amorphization limit of the silicon substrate. Two samples, implanted and a reference, were studied by grazing incidence X-ray reflectometry and X-ray diffraction methods using a high resolution Philips MRD system equipped with a Cu source and a channel-cut monochromator. The obtained spectra were compared with distributions of ion range and defect production calculated with TRIM program [1], as well as with theoretical models of reflectivity [2, 3]. The results of grazing incidence X-ray reflectometry reflectivity of the implanted sample show well-pronounced oscillations, which can be associated with a layer about 50 nm thick, approximately comparable to the thickness of the defected layer estimated from the TRIM method. Theoretical calculations of reflectivity clearly indicate an occurrence of a Si layer of electron density lower about 10-15% comparing to the unimplanted Si sample. This can be due to the vacancy production during ion implantation. A comparison of the spectra with a density distribution profile concluded from the TRIM calculations shows large discrepancies. The results indicate the applicability of grazing incidence X-ray reflectometry method in a study of amorphization processes in implanted layers.
8
Content available remote

Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

76%
Misiuk A., Adamczewska J., Bąk-Misiuk J., Härtwig J., Morawski A., Witczak Z.
Acta Physica Polonica A
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1991
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vol. 80
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issue 3
317-320
EN
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
9
Content available remote

Physical Properties of AlGaAs Epilayers Subjected to High Pressure - High Temperature Treatment

76%
Szuszkiewicz W., Gębicki W., Bąk-Misiuk J., Domagała J., Leszczyński M., Hartwig J.
Acta Physica Polonica A
|
1997
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vol. 91
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issue 5
1003-1007
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.
10
Content available remote

MBE Growth and Characterization of Cubic MnTe(111) on BaF_{2} Substrates

76%
Janik E., Wojtowicz T., Dynowska E., Bąk-Misiuk J., Domagała J., Karczewski G., Kossut J.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
982-984
EN
We report on growth by molecular beam epitaxy of cubic MnTe(111) layers on BaF_{2} (111) substrates. Layers as thick as 0.2-1.0 μm were grown. Basic characterization by X-ray diffraction shows that the cubic crystal structure is deformed to orthorhombic symmetry.
11
Content available remote

Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

76%
Misiuk A., Härtwig J., Prieur E., Ohler M., Bąk-Misiuk J., Domagała J., Surma B.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
987-991
EN
The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
12
Content available remote

Characterization and Selected Physical Properties of CdTe/MnTe Short Period Strained Superlattices

76%
Szuszkiewicz W., Dynowska E., Bąk-Misiuk J., Karczewski G., Wojtowicz T., Kossut J., Jouanne M.
Acta Physica Polonica A
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1996
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vol. 90
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issue 5
1090-1094
EN
Phonon excitations in (CdTe)_{12}/(MnTe)_{n} (100) superlattices (n=2, 4, 8) were investigated at 295 K and 25 K with the use of Raman scattering. From the "folded" phonon frequencies the elastic constant c_{11} value for MnTe was estimated. The strain arising from lattice mismatch (determined by X-ray diffraction) results in shifts of MnTe and CdTe "confined" LO phonon frequencies. For the precise determination of LO phonon dispersions an additional shift due to Mn diffusion at the CdTe/MnTe interface should be taken into account.
13
Content available remote

Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

76%
Bąk-Misiuk J., Domagała J., Trela J., Leszczyński M., Misiuk A., Hartwig J., Prieur E.
Acta Physica Polonica A
|
1996
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vol. 89
|
issue 3
405-409
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
14
Content available remote

Changes of GaP: N Defect Structure under Hydrostatic Pressure

76%
Bąk-Misiuk J., Domagała J., Kozankiewicz B., Misiuk A., Adamczewska J., Skibska M.
Acta Physica Polonica A
|
1993
|
vol. 83
|
issue 1
87-93
EN
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c_{N}, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c_{N} > 10^{20} at. cm^{-3}. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
15
Publication available in full text mode
Content available

Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

76%
Misiuk A., Bąk-Misiuk J., Bryja L., Kątcki J., Ratajczak J., Jun J., Surma B.
Acta Physica Polonica A
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2002
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vol. 101
|
issue 5
719-727
EN
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O^+ dose, D, within the 6×10^{17}-2×10^{18} cm^{-2} range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10^{17} cm^{-2}). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
16
Content available remote

Cubic MnTe - Growth by Molecular Beam Epitaxy and Basic Structural Characterization

64%
Zakrzewski A., Janik E., Dynowska E., Leszczyński M., Kutrowski M., Wojtowicz T., Karczewski G., Bąk-Misiuk J., Domagała J., Kossut J.
Acta Physica Polonica A
|
1995
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vol. 87
|
issue 2
433-436
EN
We report on growth by molecular beam epitaxy of thick layers of MnTe with zinc blende structure. Films as thick as 5.6 µm were obtained. Char­acterization by X-ray diffraction proved their good structural quality. We determined the lattice constant and its temperature dependence. Broad lu­minescence due to internal Mn^{2+}- transitions was observed. It showed an unexpected temperature dependence.
17
Content available remote

Effect of Doping on Ga_{1-x}Al_{x}As Structural Properties

64%
Bąk-Misiuk J., Domagała J., Paszkowicz W., Trela J., Żytkiewicz Z. R., Leszczyński M., Regiński K., Muszalski J., Härtwig J., Ohler M.
|
EN
The microstructure of Ga_{1-x}Al_{x}As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
18
Content available remote

PVT-Grown Single Crystals of Cd_{1-x}Zn_{x}Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy

64%
Mycielski A., Szadkowski A., Łusakowska E., Kowalczyk L., Domagała J., Bąk-Misiuk J., Wilamowski Z., Witkowska B.
Acta Physica Polonica A
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1998
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vol. 94
|
issue 3
441-445
EN
The process of growth of single crystals of Cd_{1-x}Zn_{x}Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
19
Publication available in full text mode
Content available

X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure

64%
Bąk-Misiuk J., Adamczewska J., Misiuk A., Regiński K., Wierzchowski W., Wieteska K., Kozanecki A., Kuritsyn D., Glukhanyuk W., Trela J.
Acta Physica Polonica A
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2002
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vol. 101
|
issue 5
689-699
EN
The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
20
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Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

52%
Wieteska K., Misiuk A., Prujszczyk M., Wierzchowski W., Surma B., Bąk-Misiuk J., Romanowski P., Shalimov A., Capan I., Yang D., Graeff W.
Acta Physica Polonica A
|
2008
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vol. 114
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issue 2
439-446
EN
Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
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