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Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending

100%
Ambrazevičius G., Marcinkevičius S., Lideikis T., Naudžius K.
Acta Physica Polonica A
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1992
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vol. 82
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issue 4
660-663
EN
Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.
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Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots

76%
Žurauskienė N., Marcinkevičius S., Janssen G., Goovaerts E., Nötzel R., Koenraad P., Wolter J.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
435-439
EN
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots. The data are compared with those recently obtained on shallowly formed InAs quantum dot structures.
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