The results of high resolution photoluminescence studies of erbium implanted silicon are presented. We show that the apparent enhancement of Er emission by coimplantation with light elements is not due to formation of Er-dopant complexes, but rather to Er forming complexes with defects induced by the implantation process alone.
We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed.
Deep level centers in GaAs implanted with light ions (H^{+}, He^{+}) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling directly after the implantation process and after annealing at various temperatures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps efficiently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.
We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit.
We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×10^{18} cm^{-3}. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm^{2} V^{-1} s^{-1} at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K.
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