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Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

100%

Misiuk A., Wierzchowski W., Wieteska K., Barcz A., Bak-Misiuk J., Chow L., Vanfleet R., Prujszczyk M.

Acta Physica Polonica A

2011

vol. 120

issue 1

196-199

It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using V^{+} doses, D = (1-5) × 10^{15} cm^{-2}, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of VSi_2 are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of V^{+} and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

81%

Wieteska K., Misiuk A., Prujszczyk M., Wierzchowski W., Surma B., Bąk-Misiuk J., Romanowski P., Shalimov A., Capan I., Yang D., Graeff W.

Acta Physica Polonica A

2008

vol. 114

issue 2

439-446

Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

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2 Acta Physica Polonica A

1 2011

1 2008

2 Misiuk A.

2 Prujszczyk M.

2 Wierzchowski W.

2 Wieteska K.

1 Bak-Misiuk J.

1 Barcz A.

1 Bąk-Misiuk J.

1 Capan I.

1 Chow L.

1 Graeff W.

1 Romanowski P.

1 Shalimov A.

1 Surma B.

1 Vanfleet R.

1 Yang D.

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Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment