Search results

1

Barrier Detectors Versus Homojunction Photodiode

100%

Martyniuk P., Gawron W.

Metrology and Measurement Systems

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2014

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issue 4

2

Insight into performance of quantum dot infrared photodetectors

100%

Martyniuk P., Rogalski A.

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2009

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vol. 57

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issue 1

3

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

100%

Martyniuk P., Rogalski A.

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2013

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issue 1

4

Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors

81%

Michalczewski K., Tsai T. Y., Martyniuk P., Wu C. H.

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2019

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issue 1

5

Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector

81%

Hackiewicz K., Martyniuk P., Rutkowski J., Kowalewski A.

Acta Physica Polonica A

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2017

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vol. 132

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issue 4

1415-1419

EN

In this paper we investigate interband cascade type-II mid-wavelength infrared InAs/GaSb superlattice detector in temperature range from 200 K to 300 K. The paper is based on the theoretical calculation of dark current treated as a sum of two components: average bulk current and average leakage current, flowing through the device. The average leakage current results from a comparison of theoretically calculated bulk current and measured one. We show that it is possible to fit theoretical model to experimental data, assuming that transport in absorber is determined by the dynamics of the intrinsic carriers. Based on the fit we estimated carrier lifetime greater than 100 ns in temperature range 200-300 K.

6

Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors

72%

Rogalski A., Kopytko M., Martyniuk P., Hu W., Rogalski A., Kopytko M., Martyniuk P., Hu W.

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2020

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issue 4

7

Modeling of HgCdTe LWIR detector for high operation temperature conditions

71%

Gawron W., Martyniuk P., Madejczyk P., Rogalski A., Piotrowski J.

Metrology and Measurement Systems

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2013

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issue 2

8

Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

61%

Benyahia D., Kubiszyn Ł., Michalczewski K., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

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2017

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vol. 132

|

issue 2

322-324

EN

Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.

9

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design

52%

Gomółka E., Rutkowski J., Martyniuk P., Markowska O., Kopytko M., Kowalewski A., Rogalski A., Motyka M., Krishna S.

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2018

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issue 3

10

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique

52%

Michalczewski K., Ivaldi F., Kubiszyn Ł., Benyahia D., Boguski J., Kębłowski A., Martyniuk P., Piotrowski J., Rogalski A.

Acta Physica Polonica A

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2017

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vol. 132

|

issue 2

325-328

EN

We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.

Refine search results

Barrier Detectors Versus Homojunction Photodiode

Insight into performance of quantum dot infrared photodetectors

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

Demonstration of HOT photoresponse of MWIR T2SLs InAs/InAsSb photoresistors

Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector

Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors

Modeling of HgCdTe LWIR detector for high operation temperature conditions

Comparative Study of the Molecular Beam Epitaxial Growth of InAs/GaSb Superlattices on GaAs and GaSb Substrates

Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design

Studies of Dark Current Reduction in InAsSb Mid-Wave Infrared HOT Detectors through Two Step Passivation Technique