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Energy Spectrum of InAs Quantum Dots in GaAs/AlAs Superlattices

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Nedzinskas R., Čechavičius B., Kavaliauskas J., Karpus V., Krivaitė G., Tamošiūnas V., Valušis G., Schrey F., Unterrainer K., Strasser G.

Acta Physica Polonica A

2008

vol. 113

issue 3

975-978

Photo- and contactless electroreflectance spectroscopies were applied to study optical properties and electronic structure of GaAs/AlAs superlattice systems with embedded InAs quantum dots. The observed interband transitions related to the quantum dot ground and excited states, as well as optical transitions in the combined system formed by the InAs wetting layer and GaAs/AlAs superlattice are discussed.

Photoreflectance of Epitaxial InGaAs Quantum Rods

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Nedzinskas R., Karpus V., Čechavičius B., Kavaliauskas J., Valušis G., Li L., Khanna S., Linfield E.

Acta Physica Polonica A

2011

vol. 119

issue 2

164-166

Photoreflectance spectroscopy and photoluminescence have been used to study the optical properties and electronic structure of InGaAs quantum rods grown by molecular beam epitaxy. Spectral features associated with interband optical transitions localized in the quantum rod and the surrounding quantum well regions are examined. Experimental results are compared with calculations performed within the envelope function approximation. A red shift of the quantum rod- and a blue shift of the quantum well-related optical transitions, along with a significant increase in PL intensity have been observed if an As_4 source is used instead of an As_2 source during the molecular beam epitaxial growth.

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2 Acta Physica Polonica A

1 2011

1 2008

2 Karpus V.

2 Kavaliauskas J.

2 Nedzinskas R.

2 Valušis G.

2 Čechavičius B.

1 Khanna S.

1 Krivaitė G.

1 Li L.

1 Linfield E.

1 Schrey F.

1 Strasser G.

1 Tamošiūnas V.

1 Unterrainer K.

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Energy Spectrum of InAs Quantum Dots in GaAs/AlAs Superlattices

Photoreflectance of Epitaxial InGaAs Quantum Rods