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Photovoltaic Effect with a Spectrally Dependent Sign in Type-II GaAlAs Heterostructure

100%
Jeżewski M., Teissier R., Mollot F., Planel R.
Acta Physica Polonica A
|
1992
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vol. 82
|
issue 5
833-836
EN
An asymmetric n-i-n like-II GaAs/GaAlAs/AlAs quantum heterostructure was designed and fabricated in order to observe a static photovoltage with a spectrally dependent sign. This photovoltage is associated with a light induced spatial separation of electrons and holes within selected regions of the structure. The observed photovoltage spectrum is compared with luminescence and luminescence excitation results.
2
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GaAlAs Allox/Pseudoalloy Type II Structures

100%
Jeżewski M., Teissier R., Planel R.
Acta Physica Polonica A
|
1991
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vol. 79
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issue 2-3
195-198
EN
The existence of type-II structures made from the combination of Ga_{1-x}AI_{x}As alloy and a short period GaAs/AlAs type-I superlattice is presented. Such three material structures are of type-II having at the same time electrons and holes of Γ-symmetry. This contrasts with the usual situation in type-II two material GaAs/AlAs structure where the ground state of electrons is of X-symmetry. The mechanism allowing creation of three material type-II structures is based on the difference of effective masses of electrons and holes. It should be valid for all similar semiconductor systems. Experimental results of photoluminescence and photoluminescence excitation studies of such structures made by Molecular Beam Epitaxy are presented. We determine the mutual positions of the electron and hole ground levels in the alloy and pseudoalloy and confirm that the studied structure is of type-II.
3
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The Dynamic Dielectric Function "Anomaly" for HgSe:Ga and HgSe:Fe

88%
Szuszkiewicz W., Karczewski G., Jeżewski M., Witkowska B., Mycielski A.
Acta Physica Polonica A
|
1991
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vol. 79
|
issue 2-3
369-372
EN
Reflectivity spectra of HgSe crystals highly doped with Ga and Fe, respectively, were investigated in the spectral region close to the absorption edge at temperatures between 12 K and 295 K. From the analysis of the structure observed in reflectivity the temperature dependence of the Fermi energy was determined for both kinds of crystals.
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