The IR reflection measurements of MnTe_2 were performed at room temperature under various pressures. It is observed that the reflectivity increases at the pressure range of 8-25 GPa and becomes almost constant at the higher pressure. The carrier concentrations obtained from the reflectivity spectra at the highest pressure region are the order of 10^{22} cm^{-3}. Therefore it is concluded that pressure-induced semiconductor-metal transition occurs at the pressure range of 8-25 GPa.
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