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1
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Phase Field Modeling of the Zn_{1-x}Cd_xO Solid Solutions

100%
Shtepliuk I., Podolskaia N., Lashkarev G.
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vol. 126
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issue 5
1079-1082
EN
The analysis of spinodal decomposition in the Zn_{1-x}Cd_xO ternary alloy was carried out by means of the nonlinear Cahn-Hilliard equation. Interaction parameter as a function of composition x was provided by valence force field simulations and was used in this analysis. The morphological patterns for the ternary alloys with different Cd content (x=5, 10, 50%) were experimentally obtained using the semi-implicit Fourier-spectral method. The simulated microstructure evolution Zn_{0.95}Cd_{0.05}O demonstrates that the microstructure having a form of bicontinuous worm-like network is evolved with the progress of aging. An effect of the phase-field mobility and the gradient energy on the microstructure evolution of the Zn_{1-x}Cd_xO alloys is discussed. It was found that the higher driving force for the decomposition in the higher Cd content film results in a higher decomposition rate revealed by the simulations. The temporal evolution of the simulated Zn_{0.95}Cd_{0.05}O microstructure is in good agreement with experimental results, which have been obtained for this solid solution.
2
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Study of the Clusterization of CdO Phase in ZnCdO Alloys by Modeling Fullerene-Like Zn₄₄Cd₄O₄₈ Cluster

100%
Ovsiannikova L., Kartuzov V., Shtepliuk I., Lashkarev G.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-41-A-43
EN
The structural, cohesive and electronic properties of fullerene-like isolated Zn₄₄Cd₄O₄₈ cluster with consideration of CdO phase clusterization are studied in the frames of density functional theory B3LYP/3-21G(d). It is revealed that an enlargement of CdO phase content in Zn₄₄Cd₄O₄₈ cluster leads to nonlinear rapid increase in cohesive energy and cluster stability, as well as band-gap energy shrinkage.
3
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XPS and Raman Characterizations of Zn_{1-x}Cd_{x}O Films Grown at the Different Growth Conditions

88%
Shtepliuk I., Khyzhun O., Lashkarev G., Khomyak V., Lazorenko V.
Acta Physica Polonica A
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2012
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vol. 122
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issue 6
1034-1038
EN
X-ray photoelectron spectroscopy was employed to characterize the surface chemistry and electronic properties of the Zn_{1-x}Cd_{x}O semiconductor systems obtained at the different growth conditions. The effect of the growth conditions on the core and valence band spectra as well as room-temperature photoluminescence of the Zn_{1-x}Cd_{x}O films was investigated and discussed. Behavior of the X-ray photoelectron spectroscopy peaks indicated an increase of the cadmium and a depletion of the oxygen concentrations upon changing the Ar/O_2 gas ratio and dc power.
4
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Spectral Distribution of Photoelectric Efficiency οf Thin-Film CdS/CdTe Heterostructure

76%
Kosyachenko L., Lashkarev G., Grushko E., Ievtushenko A., Sklyarchuk V., Mathew X., Paulson P.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
862-864
EN
The spectral distribution of the quantum efficiency in thin-film CdS/CdTe solar cells is being investigated by taking into account the drift and diffusion components of photocurrent, recombination at the CdS-CdTe interface, the back surface of the CdTe absorber layer and in the space-charge region. The effect of uncompensated acceptor concentration, lifetime of minority carriers and surface recombination velocity on the charge collection efficiency are discussed. The losses caused by reflections and absorption in the CdS and indium tin oxide layers are also considered.
5
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X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films

76%
Ievtushenko A., Khyzhun O., Shtepliuk I., Tkach V., Lazorenko V., Lashkarev G.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
858-861
EN
Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
6
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Detector with High Internal Photocurrent Gain Based on ZnO:N

76%
Kosyachenko L., Lashkarev G., Ievtushenko A., Lazorenko V., Sklyarchuk V., Sklyarchuk O.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
681-682
EN
The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
7
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Swift Xe^{26+} Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

76%
Myroniuk D., Lashkarev G., Shtepliuk I., Skuratov V., Reszka A., Kowalski B.
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vol. 126
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issue 5
1199-1202
EN
Here we report the effect of the irradiation by 167 MeV Xe^{26+} ions (in the fluence range up to 3× 10^{12} ions/cm^2) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.
8
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Fabrication and Properties of the Photosensitive Anisotype n-Cd_{x}Zn_{1-x}O/p-CdTe Heterojunctions

76%
Khomyak V., Brus V., Ilashchuk M., Orletsky I., Shtepliuk I., Lashkarev G.
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vol. 126
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issue 5
1163-1166
EN
We have fabricated photosensitive anisotype n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions by a deposition of Cd_{0.5}Zn_{0.5}O film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.
9
Content available remote

Effect of High Energy Electron Irradiation on Structure and Optical Properties of ZnO Films

64%
Myroniuk D., Lashkarev G., Shtepliuk I., Lazorenko V., Maslyuk V., Timofeeva I., Romaniuk A., Strelchuk V., Kolomys O., Khomyak V.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
891-894
EN
Zinc oxide films were grown on sapphire substrates by direct current magnetron sputtering and irradiated by electrons with energy 10 MeV and fluences 10^{16} and 2 × 10^{16} cm^{-2}. As-grown and irradiated samples were investigated by X-ray diffraction and photoluminescence spectroscopy. It was found that radiation causes the appearance of complex defects, reducing the size of coherent scattering regions and the increase of the defect PL band.
10
Content available remote

Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding

64%
Shtepliuk I., Lashkarev G., Khyzhun O., Kowalski B., Reszka A., Khomyak V., Lazorenko V., Timofeeva I.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
914-917
EN
ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire c-Al_2O_3 substrates applying radiofrequency magnetron sputtering at the temperature of 400°C in Ar-O_2 atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.
11
Content available remote

Effects of Ar/O_2 Gas Ratio on the Properties of the Zn_{0.9}Cd_{0.1}O Films Prepared by DC Reactive Magnetron Sputtering

64%
Shtepliuk I., Lashkarev G., Khomyak V., Marianchuk P., Koreniuk P., Myroniuk D., Lazorenko V., Timofeeva I.
Acta Physica Polonica A
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2011
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vol. 120
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issue 6A
A-61-A-65
EN
Zn_{0.9}Cd_{0.1}O ternary alloys have been grown on the sapphire substrates by using the direct current (dc) magnetron sputtering. X-ray diffraction measurements showed that all samples were highly oriented films along the c-axis perpendicular to the substrate surface. X-ray diffraction confirmed that the crystal quality of Zn_{0.9}Cd_{0.1}O films can be controlled by changing the gas ratio of Ar/O_2. The optical properties of these films have been investigated by means of the optical transmittance and the low-temperature photoluminescence spectra. It was found that the optical band gap of the deposited films can be tuned by growth parameters. The luminescence processes are considered in the terms of alloy fluctuation.
12
Content available remote

Studies of Diluted Magnetic Semiconductor Sn_{1-x-y-z}Ge_{x}Mn_{y}Gd_{z}Te

64%
Sichkovskyi V., Radchenko M., Lashkarev G., Slyn'ko V., Slyn'ko E., Knoff W., Domukhovski V., Dziawa P., Story T.
Acta Physica Polonica A
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2009
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vol. 116
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issue 5
911-912
EN
Magnetization, anomalous Hall effect, thermoelectric power, magnetoresistance, and resistivity of Sn_{1-x-y-z}Ge_{x}Mn_{y}Gd_{z}Te (x = 0.039÷0.597, y = 0.077÷0.125, z = 0.0014÷0.028) mixed crystals were studied over the temperature range 4.2-300 K. The ferromagnetic order with Curie temperature 18-24 K was revealed.
13
Content available remote

Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering

64%
Ievtushenko A., Karpyna V., Lashkarev G., Lazorenko V., Baturin V., Karpenko A., Lunika M., Dan'ko A.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1131-1137
EN
Multilayered ZnO films were deposited by rf magnetron sputtering on silicon and sapphire substrates. The aim of this work is to improve structural quality of ZnO thin films grown on just listed substrates. Presented X-ray diffraction data testify to remarkable relaxation of compressive stress in two- and three-layered ZnO films in comparison with single-layer one.
14
Content available remote

Ferromagnetism of Narrow-Gap Ge_{1-x-y}Sn_xMn_yTe and Layered In_{1-x}Mn_xSe Semiconductors

52%
Lashkarev G., Sichkovskyi V., Radchenko M., Dmitriev A., Slyn'ko V., Slyn'ko E., Kovalyuk Z., Butorin P., Knoff W., Story T., Szymczak R., Jakieła R., Aleshkevych P., Dobrowolski W.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1219-1227
EN
Magnetic susceptibility, Hall effect and resistivity of narrow-gap Ge_{1-x-y}Sn_xMn_yTe single crystals (x = 0.083÷0.115; y = 0.025÷0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at T_C ≈ 50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature T_f. Magnetic structure of InSe ⟨Mn⟩ 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.
15
Content available remote

Optical and Electrical Properties of Highly Doped ZnO:Al Films Deposited by Atomic Layer Deposition on Si Substrates in Visible and Near Infrared Region

52%
Romanyuk V., Dmitruk N., Karpyna V., Lashkarev G., Popovych V., Dranchuk M., Pietruszka R., Godlewski M., Dovbeshko G., Timofeeva I., Kondratenko O., Taborska, M., Ievtushenko A.
Acta Physica Polonica A
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2016
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vol. 129
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issue 1a
A-36-A-40
EN
Optical properties of ZnO films doped by Al in the range 0.5 to 7 at.% and deposited by atomic layer deposition were studied in visible and infrared spectral range. Spectral dependences of film optical permittivity were modeled with the Lorentz-Drude approximation resulting in ZnO:Al plasma frequency and plasma damping parameters. We observed changing electron effective mass from 0.29m₀ to 0.5m₀ with increasing electron concentration in the range (0.9-4) × 10²⁰ due to the phenomenon of conduction band non-parabolicity. Comparing the results of optical and electrical investigations we can see that the main scattering mechanism is the scattering on grain boundaries (its contribution is about 60%).
16
Content available remote

Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

52%
Ievtushenko A., Lashkarev G., Lazorenko V., Karpyna V., Sichkovskyi V., Kosyachenko L., Sklyarchuk V., Sklyarchuk O., Bosy V., Korzhinski F., Ulyashin A., Khranovskyy V., Yakimova R.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1123-1129
EN
Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.
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