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Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

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Guziewicz M., Slysz W., Borysiewicz M., Kruszka R., Sidor Z., Juchniewicz M., Golaszewska K., Domagala J., Rzodkiewicz W., Ratajczak J., Bar J., Wegrzecki M., Sobolewski R.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-76-A-79

We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on Al_2O_3 and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × 10^6 A/cm^2 at 4.8 K.

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1 Acta Physica Polonica A

1 2011

1 Bar J.

1 Borysiewicz M.

1 Domagala J.

1 Golaszewska K.

1 Guziewicz M.

1 Juchniewicz M.

1 Kruszka R.

1 Ratajczak J.

1 Rzodkiewicz W.

1 Sidor Z.

1 Slysz W.

1 Sobolewski R.

1 Wegrzecki M.

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Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors