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Electrical and Optical Properties of Highly Non-stoichiometric GaAs

100%

Kurpiewski A., Korona K., Kamińska M., Palczewska M., Jagadish C., Williams J.

Acta Physica Polonica A

1995

vol. 87

issue 2

518-522

The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorption coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.

Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs

84%

Korona K., Jasiński J., Kurpiewski A., Kamińska M., Jagadish C., Tan H., Krotkus A., Marcinkevicius S.

Acta Physica Polonica A

1996

vol. 90

issue 4

851-854

Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10^{14} to 5×10^{16} cm^{-2}. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.

Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide

84%

Jasiński J., Kurpiewski A., Korοna K., Kamińska M., Ρalczewska M., Krotkus A., Marcinkievicius S., Liliental-Weber Z., Tan H. H., Jagadish C.

Acta Physica Polonica A

1995

vol. 88

issue 4

747-750

Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As_{Ga}) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.

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3 Acta Physica Polonica A

1 1996

2 1995

3 Jagadish C.

3 Kamińska M.

3 Kurpiewski A.

2 Jasiński J.

2 Korona K.

2 Krotkus A.

1 Korοna K.

1 Liliental-Weber Z.

1 Marcinkevicius S.

1 Marcinkievicius S.

1 Palczewska M.

1 Tan H.

1 Tan H. H.

1 Williams J.

1 Ρalczewska M.

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Electrical and Optical Properties of Highly Non-stoichiometric GaAs

Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs

Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide