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Synthesizing of (Bi₂O₃)_{1-x-y}(Ho₂O₃)_x(Dy₂O₃)_y Electrolytes for Intermediate-Temperature Solid Oxide Fuel Cells

100%
Kaşikci Özen M., Kayali R., Çiçek Bezir N., Evcin A.
Acta Physica Polonica A
|
2016
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vol. 129
|
issue 1
125-132
EN
In present study, Ho₂O₃ and Dy₂O₃ doped Bi₂O₃ composite materials for intermediate-temperature solid oxide fuel cells (IT-SOFCs) were investigated. (Bi₂O₃)_{1-x-y}(Ho₂O₃)_x(Dy₂O₃)_y ternary systems (x=0.11, 0.13, 0.15 and y=0.01, 0.03, 0.05, 0.07) were fabricated using conventional solid-state synthesis techniques. The samples were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, differential thermal analysis/thermal gravimeter, and the four-point probe technique. X-ray powder diffraction measurements indicated that all samples have the stable fluorite type face centered cubic (fcc) δ-Bi₂O₃ phase. Scanning electron microscopy micrographs of all of the samples showed that grain size distribution was uniform. Four-point probe technique measurements showed that the conductivity of the samples increase with increase of temperature. Additionally, it has been found that the maximum conductivity values of all samples fall in a range 8.44×10^{-2}-4.60×10^{-1} Scm^{-1} and their conductivity values corresponding to the intermediate-temperature region vary in the range 1.65×10^{-3}-2.30×10^{-1} Scm^{-1}. The activation energy values of the samples were calculated from łogσ graphics versus 1000/T using the Arrhenius equation. It was found that there is a good agreement between the activation energy values and conductivity values.
2
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Comparison of Five-Layered ZrO₂ and Single-Layered Ce, Eu, and Dy-Doped ZrO₂ Thin Films Prepared by Sol-Gel Spin Coating Method

88%
Çiçek Bezir N., Evcin A., Kayali R., Özen M., Esen K.
Acta Physica Polonica A
|
2017
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vol. 132
|
issue 3
612-616
EN
In order to investigate the influence of the number of layers on the properties of ZrO₂ thin films, we prepared one pure ZrO₂ film sample with five layers and Ce, Eu, and Dy-doped ZrO₂ samples with single layer, by spin-coating sol gel-method. The crystal structures of thin films were determined using X-ray diffraction, morphology of the samples was analyzed by scanning electron microscopy, and the optical properties of the samples were determined by ultraviolet/visible absorbance measurements. The results of these measurements have shown that the concentration of the dopants and the thickness of thin film layers play a vital role in the physical, chemical, and optical properties of the pure and doped ZrO₂ thin films.
3
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Comparison of Pure and Doped TiO₂ Thin Films Prepared by Sol-Gel Spin-Coating Method

88%
Çiçek Bezir N., Evcin A., Kayali R., Özen M., Balyaci G.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 3
620-624
EN
In this study, using spin-coating sol-gel method we fabricated TiO₂ thin films, doped with different concentrations (1, 2, and 3 mole %) of Ce, Dy, and Eu. Characterization of the prepared samples was performed by means of the X-ray diffraction, scanning electron microscopy, ultraviolet visible absorption, and differential thermal and thermo gravimetric analysis. X-ray diffraction measurements have shown that in Eu and Dy-doped samples crystal structure consists of mixed rutile and the dominant anatase phases, however the Ce doped samples consist of anatase phase only. Scanning electron microscopy images have revealed that while average thin film thickness of the Dy-doped samples decreases with increasing concentration of Dy, the average film thicknesses of samples doped with Ce and Eu increases with increasing concentrations of these dopants. Ultraviolet visible absorption spectroscopy measurements have shown that while absorbances of the samples doped by 1 and 2 mole % of the dopants have nearly similar properties, these properties differ from each other for 3 mole % of the dopants. Finally, differential thermal and thermo gravimetric analyses have shown that the chemical reactions and weight losses of the samples have occurred at the expected temperatures.
4
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Effect of Layer Thickness on I-V Characteristics of GaInP Nanofibers Fabricated by Electrospinning on n-Si Substrates

76%
Çiçek Bezir N., Evcin A., Okçu H., Kayali R., Kaleli M., Aldemir D.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 3
638-641
EN
GaInP nanofibers were formed on n-Si substrates by electrospinning method, using constant voltage (25 kV), height (6 cm), and flow rate (0.3 ml/h) during various process times (of 10, 20, 25 minutes). Characterization of the prepared samples was performed by X-ray diffraction, differential scanning calorimetry/thermal gravimetric analysis, scanning electron microscopy, and energy dispersive X-ray spectrometry. Furthermore, the current-voltage measurements of the GaInP/n-Si samples have been carried out. The obtained results show that I-V characteristics of all GaInP/n-Si samples fabricated with three thicknesses of GaInP layers are rather in a good agreement with the theory and that they exhibit rectifying properties.
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