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EN
Gas sensing materials have been prepared in a form of TiO_{2}-SnO_{2} thin films by rf reactive sputtering from Ti:SnO_{2} and Sn:TiO_{2} targets. Material studies have been performed by scanning electron microscopy, atomic force microscopy, X-ray diffraction at grazing incidence, Mössbauer spectroscopy, X-ray photoelectron spectroscopy and optical spectrophotometry. Dynamic gas sensing responses have been recorded as reproducible changes in the electrical resistance upon introduction of hydrogen at a partial pressure of 100-6000 ppm over a wide temperature range 473-873 K. Contamination experiments have been carried out with the motor oil (40 vol.% solution in CCl_{4}) in order to study the effect of UV light illumination on the gas sensor response. Optical spectroscopy has been applied to monitor the photodecomposition of the test compound, bromothymol blue. The Electronic Nose, ALPHA MOS FOX 4000 has been used in order to differentiate between different groups of motor oil vapors.
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EN
Thin films of TiO_{2}-SnO_{2} and SrTiO_{3}-BaTiO_{3} are deposited by rf sputtering. The crystallographic and optical properties near the band gap absorption are investigated as a function of film composition. Systematic displacement of the fundamental absorption edge shows different behaviour for amorphous and polycrystalline samples. Results are discussed in terms of the influence of the substitution on the local environment of Ti ion and Me-O distances. Application of XANES and EXAFS is proposed for the studies of solid-state solutions.
EN
Thin film series consisting of Ti, V, TiO₂ and V₂O₅ layer with different layer geometries, sequences and thicknesses have been prepared by the sputtering technique. The hydrogen depth profile of selected films upon hydrogen charging at 1 bar and/or hydrogenation at pressure up to 102 bar was determined by using secondary ion mass spectrometry and nuclear reaction analysis using a N-15 beam. The highest hydrogen storage with a concentration up to 50 at.% was found in the pure Ti and Ti-contained layer, while it amounts to around 30% in the metallic Ti-V-Ni layer. Hydrogen can diffuse through the TiO₂ layer without accumulation, but can be stored in the VO₂ layer in some cases. Hydrogen can remove the preferential Ti orientation in the films and induce a complete transition of V₂O₅ into VO₂ in the films.
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