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Study of p-Fe₃O₄/n-(GaAs,Si) Heterostructures: Fabrication and Physical Properties

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Lisauskas V., Butkutė R., Vengalis B., Šliužienė K., Tamulevicius S., Andrulevicius M.

Acta Physica Polonica A

2008

vol. 113

issue 3

1055-1058

We report preparation and investigation of p -n heterostructures based on Fe₃O₄ thin films grown on semiconductor Si and GaAs substrates. Fe₃O₄ films with thickness ranging from 60 to 300 nm were grown at 350÷450°C using dc magnetron sputtering technique. The measurement of X-ray diffraction and reflection high energy electron diffraction revealed polycrystalline microstructure of thin Fe₃O₄ films deposited on both Si and GaAs substrate. Investigation of surface composition by X-ray photoelectron spectroscopy showed that Fe 2p peak consists of three main peaks, namely, metallic iron Fe(0), Fe(II), and Fe(III). Transport measurements of Fe₃O₄/n-(Si, GaAs) heterostructures demonstrated nonlinear current-voltage (I -V) dependences in the temperature range from 300 K to 78 K.

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1 Acta Physica Polonica A

1 2008

1 Andrulevicius M.

1 Butkutė R.

1 Lisauskas V.

1 Tamulevicius S.

1 Vengalis B.

1 Šliužienė K.

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Study of p-Fe₃O₄/n-(GaAs,Si) Heterostructures: Fabrication and Physical Properties