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Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds

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Dugaev V., Litvinov V., Petrov P., Mironov O., Nashchekina O., Oszwałdowski M.
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The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
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