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Allocation and Properties of Iron States in Cd_{1-x}Fe_{x}Te in Forbidden Gap Energy Range

100%
Hołda A., Rodzik A., Melnikov A., Żukowski P.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
357-360
EN
The use of different experimental methods (reflectivity, absorption, photoconductivity and cathodoluminescence) allowed us to confirm the existence of the deep donor-like state of iron and present allocation and properties of the iron states in Cd_{1-y}Fe_{x}Te (0 ≤ x ≤ 0.05) at 300 K and 77 K in the forbidden gap energy range. It was concluded that the increase in width of the forbidden gap with the change of temperature from 300 K to 77 K leads mainly to the rise of the energy distance between the donor-like iron state ^{5}E and the bottom of the conduction band.
2
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Fabrication and Magnetotransport Properties of Carbon Films with Embedded Metal Nanoclusters

100%
Ksenevich V., Bashmakov I., Melnikov A., Wieck A.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
356-360
EN
2-dimensional arrays of Co- and Pd-clusters embedded in carbon films were fabricated by means of heat-treatment method of carboxylated cellulose films after the exchange of COOH-group protons by Co- and Pd-cations. The sizes of metal clusters within range 10 nm-1μm were obtained in dependence on the heat-treatment temperature. The dependencies of the resistance on temperature and magnetic field for the samples annealed at T=700ºC and 900ºC were measured. The R(T) dependencies both for carbon films with Co- and Pd-clusters can be fitted by expression R=R_0 exp(T_0/T)^{1/n} inherent for variable-range hopping. In the whole range of investigated magnetic field and temperature magnetoresistance was negative and can be related to quantum interference in the variable range hopping transport along neighboring alternative paths.
3
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Research into morphology and phase structure in the surface of Al-Si alloy modified by yttrium oxide

88%
Zagulyaev D., Konovalov S., Gromov V., Melnikov A., Shlyarov V.
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2019
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issue 2
4
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Electrical Properties and Magnetoresistance of Nanogranular SnO_2 Films

76%
Ksenevich V., Dovzhenko T., Dorosinets V., Bashmakov I., Melnikov A., Wieck A.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
1043-1046
EN
Magnetotransport properties of the nanogranular SnO_2 films were invesigated. Non-linear current-voltage (I-V) characteristics were observed at low temperatures. The temperature dependence of the resistance and non-ohmic I-V curves can be well approximated by fluctuation-induced tunnelling model, indicating importance of the contacts barriers between SnO_2 grains. Magnetoresistance was measured within temperature range 2-15.3 K and could be consistent with the variable-range hopping conduction mechanism due to existence of localized states on the surface of SnO_2 grains.
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