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Compact Modeling for Submicron Fully Depleted SOI MOSFET's

100%
Remmouche R., Boutaoui N., Bouridah H.
Acta Physica Polonica A
|
2012
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vol. 121
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issue 1
190-192
EN
In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.
2
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Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors

100%
Remmouche R., Fates R., Bouridah H.
Acta Physica Polonica A
|
2017
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vol. 132
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issue 4
1230-1233
EN
This paper presents an analytical model calculating the threshold voltage in nanocrystalline silicon (nc-Si) thin film transistors by considering a granular morphology of silicon nanocrystallites forming the channel and using the two-dimensional the Poisson equation. The numerical calculations demonstrate that, according to the quantum size effects on both dielectric constant and band gap, the threshold voltage values are strongly related to the silicon crystallites structure. To justify the validity of our model suitable for implementation in circuit simulators such as SPICE, the simulation results obtained are compared with the available research data and they shows a satisfactory match, thus, demonstrating the validity of our model.
3
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Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition

76%
Bouridah H., Haoues H., Beghoul M., Mansour F., Remmouche R., Temple-Boyer P.
Acta Physica Polonica A
|
2012
|
vol. 121
|
issue 1
175-177
EN
In this work, we investigate the formation of silicon nanocrystals in annealed low pressure chemical vapor deposition in situ nitrogen doped silicon thin films (SiN_x) obtained at low temperature (465°C) by using a mixture of disilane (Si_2H_6) and ammonia (NH_3). Results show that nitrogen content in films plays an important role in defining the obtained films morphology in terms of crystallites sizes and their distribution. Indeed, according to the nitrogen content introduced in films, the crystalline state of films varies from a submicron crystalline structure to a nanocrystalline structure. An average silicon nanocrystalline size of 10 nm was obtained for film with x = 0.07 nitrogen content, annealed under a temperature of 850C during 2 h.
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