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Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates

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Kaygorodov V., Sorokin V., Sedova I., Nekrutkina O., Sorokin S., Shubina T., Toropov A., Ivanov S.
Acta Physica Polonica A
|
2001
|
vol. 100
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issue 3
443-450
EN
We report on molecular beam epitaxy of CdSe/CdMgSe heterostructures on InAs(001) substrates and studies of their optical and structural properties. The CdMgSe energy gap versus composition dependence is determined. The zinc-blende MgSe band-gap energy and optical bowing parameter are estimated to be 4.05 eV and 0.2 eV, respectively. The CdSe quantum wells embedded into CdMgSe barriers demonstrate intense photoluminescence. Effective mass approximation calculations of electron-heavy hole optical transitions in CdSe quantum well are in a good agreement with the experimental data obtained.
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