Results found: 3

Number of results on page

Search results

Sort By:

Limit search:

Growth and Investigation of p-La_{2/3}Ca_{1/3}MnO_3/n-Si Heterostructures

100%

Anisimovas F., Butkutė R., Devenson J., Maneikis A., Stankevič V., Pyragas V., Vengalis B.

Acta Physica Polonica A

2008

vol. 113

issue 3

997-1000

We report the fabrication and investigation of p-n diode structures based on thin hole-doped La_{2/3}Ca_{1/3}MnO_3 films grown on n-type silicon substrates. La_{2/3}Ca_{1/3}MnO_3 films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of La_{2/3}Ca_{1/3}MnO_3 thin films on Si substrates. The surface roughness of La_{2/3}Ca_{1/3}MnO_3 films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that La_{2/3}Ca_{1/3}MnO_3/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.

Application of Ultrafast Schottky Diodes to High Megahertz Chaotic Oscillators

100%

Mykolaitis G., Tamaševičius A., Bumelienė S., Namajūnas A., Pyragas K., Pyragas V.

Acta Physica Polonica A

2005

vol. 107

issue 2

365-368

The considered chaotic oscillator consists of an amplifier, 2nd order LC resonator, Schottky diode and an extra capacitor in parallel to the diode. The diode plays the role of a nonlinear device. Chaotic oscillations are demonstrated numerically and experimentally at low as well as at high megahertz frequencies, up to 250 MHz.

Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

84%

Vengalis B., Rosa A., Devenson J., Šliužienė K., Lisauskas V., Oginskis A., Anisimovas F., Pyragas V.

Acta Physica Polonica A

2005

vol. 107

issue 2

290-293

High crystalline quality films of n-La_{2/3}Ce_{1/3}MnO_3, p-La_{2/3}Ca_{1/3}MnO_3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO_3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La_{2/3}Ce_{1/3}Mn O_3/La_{2/3}Ca_{1/3}MnO_3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.

Refine search results

3 Acta Physica Polonica A

1 2008

2 2005

3 Pyragas V.

2 Anisimovas F.

2 Devenson J.

2 Vengalis B.

1 Bumelienė S.

1 Butkutė R.

1 Lisauskas V.

1 Maneikis A.

1 Mykolaitis G.

1 Namajūnas A.

1 Oginskis A.

1 Pyragas K.

1 Rosa A.

1 Stankevič V.

1 Tamaševičius A.

1 Šliužienė K.

Search results

Growth and Investigation of p-La_{2/3}Ca_{1/3}MnO_3/n-Si Heterostructures

Application of Ultrafast Schottky Diodes to High Megahertz Chaotic Oscillators

Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites