Search results

Sort By:

Limit search:

The Effect of Pressure and Temperature on AlGaInP and AlGaAs Laser Diodes

100%

Adamiec P., Świetlik T., Bohdan R., Bercha A., Dybała F., Trzeciakowski W.

Acta Physica Polonica A

2003

vol. 103

issue 6

585-593

InGaP/AlGaInP lasers (emitting from 630 to 690 nm) and GaAs/AlGaAs lasers (emitting at 780 nm) were studied under hydrostatic pressure up to 20 kbar and at temperatures from 240 to 300 K. The electrical characteristics, the power-current dependencies and the emission spectra were measured. The emission spectra shifted in agreement with the pressure/temperature variation of the band gaps in active layers of the laser. Since at high pressure theΓ-X separation in the conduction band is strongly reduced (both in AlGaInP and AlGaAs), the dominant loss mechanism of the lasers is the electron leakage to X minima in the p-claddings. This, in turn, leads to high sensitivity of threshold currents to temperature. The dependence of threshold currents on pressure and on temperature is in good agreement with the simple theoretical analysis taking into account the carrier leakage and the radiative and nonradiative recombination. Better agreement between the theory and the experiment is obtained assuming drift rather than diffusion leakage. This indicates that threshold currents could be further reduced if the p-doping is improved in the claddings.

Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems

100%

Maziarz M., Piechal B., Bercha A., Bohdan R., Trzeciakowski W., Majewski J.

Acta Physica Polonica A

2007

vol. 112

issue 2

437-442

In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be achieved by applying high pressure and low temperature. We report the experimentally measured dependence of the threshold current and emission energy on pressure and temperature in InGaAs/GaAs quantum-well lasers and provide the simple theoretical explanation of the physics behind the experimental findings.

Refine search results

2 Acta Physica Polonica A

1 2007

1 2003

2 Bercha A.

2 Bohdan R.

2 Trzeciakowski W.

1 Adamiec P.

1 Dybała F.

1 Majewski J.

1 Maziarz M.

1 Piechal B.

1 Świetlik T.

Search results

The Effect of Pressure and Temperature on AlGaInP and AlGaAs Laser Diodes

Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems