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The Phonon-Assisted Radiative Recombination of Excitons Confined in InAs Quantum Dashes

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Dusanowski Ł., Musiał A., Sęk G., Machnikowski P.
Acta Physica Polonica A
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2013
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vol. 124
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issue 5
813-816
EN
In this report we have investigated theoretically the phonon-assisted recombination process of excitons confined in strongly elongated semiconductor nanostructures, called quantum dashes. Interaction with phonon bath leads to the occurrence of phonon-assisted recombination, which in the case of acoustic phonons is manifested in the optical spectra as a deviation of the homogeneously broadened emission line shape from expected Lorentzian profile via occurrence of the so-called phonon sidebands. Hereby, we have modeled the influence of the quantum dash geometry on this spectral feature proving pronounced suppression of phonon-induced decoherence for strongly elongated nanostructures. Furthermore, the importance of different phonon coupling mechanisms has been evaluated and the spectral diffusion effects, unavoidable in the time-integrated photoluminescence experiments, have been accounted for.
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InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

76%
Mrowiński P., Dusanowski Ł., Somers A., Höfling S., Reithmaier J., Misiewicz J., Sęk G.
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EN
In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300± 40 nm spectral range, i.e. the O-band of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in a high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.
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