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EN
The possibility of using the transverse acoustoelectric phenomena in experimental investigations of near surface region in semiconductor crystals was discussed. The results of experimental investigations of GaP:Te(111) surfaces by means of the transverse acoustoelectric voltage were presented. Applying the transverse acoustoelectric voltage method, the lifetime τ of minority carrier in the near-surface region and the surface potential V_{s} in GaP:Te(111) surfaces after their different technological treatments were determined.
EN
The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon-electron type for determining both the effective carrier lifetime τ influenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters τ and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the offered method, are presented.
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EN
The paper presents investigations concerning the analysis of photonic structures with grating couplers. In the paper basic theoretically information on photonic structures with grating couplers is presented. The results of numerical investigations on photonic structures with grating couplers are discussed, too. Investigations show an essential influence of the geometrical parameters of grating couplers on the effectiveness of the input and output of optic power into and out of this photonic structure. In the paper the selected results of experimental realizations of photonic structures with grating couplers based on zinc oxide ZnO are presented.
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