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Acta Physica Polonica A
|
2009
|
vol. 115
|
issue 6
1177-1179
EN
A high-intensity pulsed ion beam (HIPIB) technique is applied to heat flux testing of plasma facing materials for fusion experiment. The HIPIB is generated at a relatively stable power density up to 10^{8} W/cm^{2}, which covers a heat flux parameter of up to several hundreds MW m^{-2} s^{1/2}. Surface morphology and weight loss are examined for doped and coated graphite with HIPIB exposure of 280 MW m^{-2} s^{1/2}, being of the same order of thermal loads during off-normal events in future fusion reactors. The work demonstrates a first example utilizing the HIPIB technique to study thermal response of plasma facing materials under fusion relevant thermal loads.
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Will Czochralski Growth of Sapphire Once Again Prevail?

81%
EN
In the past decade there has been an explosive growth in the consumption of sapphire driven by the demands of the next generation of energy efficient general lighting based on GaN LEDs. This application requires orienting these rhombohedral corundum crystals such that the substrate surface is the c-plane; a basal plane defined using hexagonal axes. Sapphire crystals form a strong facet on the c-plane, and growth in that direction generally results in crystals with high defect densities, particularly dislocations, and low angle grain boundaries. To overcome this drawback, the usual methodology is to grow the crystal in the a-direction and then core drill rods perpendicularly which are then sliced into c-plane substrates. For all crystal growth techniques commonly employed for sapphire, this approach suffers from poor material utilization. Although this has generally been viewed as an acceptable trade-off in the manufacturing process as long as 2" substrates were the dominant market, as substrate diameters have increased towards 150 mm and larger, this compromise is no longer seen as a viable alternative because of the low material utilization and the high energy consumption of the growth process. This has led to a renewed look at the Czochralski process for more efficient c-axis substrate production.
EN
As the most important material parameter of semiconductor, bandgap is necessary to be investigated to meet the design requirements of the high-performance optoelectronic devices. A new method of is proposed to calibrate the bandgap of antimonide based multi-component alloys with considering the effect of spin-orbit splitting off bands and the doublet degeneracy of valance band on the bandgaps of Sb-containing materials. A correction factor is introduced in the conventional calculation, and the spin-orbit splitting method is proposed. Besides, the In_xGa_{1-x}As_ySb_{1-y} films with different compositions are grown on GaSb substrates by molecular beam epitaxy, and the corresponding bandgaps are obtained by photoluminescence to test the accuracy and reliability of this new method. An error rate analysis reveals that the α calculated by the spin-orbit splitting correction method is decreased to 2%, almost one order of magnitude smaller than the Moon method, which means that the new method can calculate the antimonide multicomponent more accurately with some applicability. This work can give a reasonable interpretation for the reported results and beneficial to tailor the antimonides properties and optoelectronic devices.
EN
In this paper, an optical microscope objective with large numerical number is inserted into a Mach-Zehnder interferometer, and this system is adopted to detect the surface morphologies of two ruled transmission gratings with area scale to a micrometer. The object waves transmitting from the gratings interfere with spherical reference wave, and the interferograms constructed are recorded by a high-resolution CCD. The surface maps of the gratings are retrieved from the interferograms, and the results are confirmed by the measurement with an atomic force microscope, with detection errors in nanometer scale. This work provides an optical non-destructive method for precise detection of small-area sophisticated object surfaces with an optical microscope objective.
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