Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 1

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Electrical Behaviour of Nanostructured Porous Silicon

100%
Azim-Araghi M., Ashrafabadi S., Kanjuri F.
Acta Physica Polonica A
|
2012
|
vol. 122
|
issue 1
170-173
EN
The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at 10^2 - 10^5 Hz frequency range.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.