Simulation, modeling and characterization of the aluminum ion implantation in 4H-SiC for large-area photodiode technology have been presented in this paper. Modeling and simulation have been performed using the SRIM and TCAD software EDA environments. Main goals were to present and compare the single vs. multiple ion implantation results as well to develop processes leading to achieve required implantation profiles.
The phase-space formulation of quantum mechanics based on the Wigner distribution function is applied to investigate the influence of the scattering processes on the electronic position-momentum correlations in the resonant-tunnelling nanosystem.
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