Search results

Sort By:

Limit search:

Laser Raman-Spectroscopy Identification of Ion-Synthesized Ternary Mixed Ga_{1-x}Al_{x}P in Amorphous and Crystalline Phases

100%

Gotoshia S., Gotoshia L.

Acta Physica Polonica A

2015

vol. 127

issue 6

1680-1688

A ternary semiconductor Ga_{1-x}Al_{x}P has been synthesized for the first time by hot implantation of aluminum in GaP. Two mixed crystals of various compositions have been synthesized when implanting by two different fluencies of aluminum ions. The identification of the above mentioned mixed semiconductors in the amorphous as well as in the crystalline phases has been carried out by the laser Raman spectroscopy. The synthesis of the ternary compositions has been carried out at different depths from the substrate surface by implantation of aluminum ions of various energies. Ga_{1-x}Al_{x}P synthesized by the ion implantation shows the behavior of two-mode mixed semiconductors. The synthesized compounds are defective and the Raman spectra prove the fact. The share of disordered structure of the composition synthesized with high fluencies of aluminum ion implantation, 2.5 × 10^{17} ion/cm^2, is especially big.

Refine search results

1 Acta Physica Polonica A

1 2015

1 Gotoshia L.

1 Gotoshia S.

Search results

Laser Raman-Spectroscopy Identification of Ion-Synthesized Ternary Mixed Ga_{1-x}Al_{x}P in Amorphous and Crystalline Phases