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In this work, we discuss theoretically the formation of the Tamm plasmon/exciton-polariton hybrid states in an (Al,Ga)As microcavity and their modulation by surface acoustic waves. The modulation of the Tamm plasmon/exciton-polariton states origins in the change of the excitonic band gap energy and the thickness change of the sample structure layers due to the induced strain fields by surface acoustic waves. The frequency f_{SAW} of the acoustic modulation of the Tamm plasmon/exciton-polariton states is limited by the thickness of the upper distributed Bragg reflector. For the Tamm plasmon/exciton-polariton states in Al_xGa_{1-x}As/GaAs structures f_{SAW} is in the range of 370 MHz while f_{SAW} in GHz range is possible for the parametric Tamm plasmon/exciton-polariton states. In both cases, the acoustic modulation is several meV for typical acoustic power levels.
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