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Exciton States in Type-II ZnSe/BeTe Quantum Wells

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Platonov A. V., Yakovlev D. R., Zehnder U., Kochereshko V. P., Ossau W., Fischer F., Litz T., Waag A., Landwehr G.

Acta Physica Polonica A

1997

vol. 92

issue 5

953-957

We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction.

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1 Acta Physica Polonica A

1 1997

1 Fischer F.

1 Kochereshko V. P.

1 Landwehr G.

1 Litz T.

1 Ossau W.

1 Platonov A. V.

1 Waag A.

1 Yakovlev D. R.

1 Zehnder U.

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Exciton States in Type-II ZnSe/BeTe Quantum Wells