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Zn_{1-x}(Mn,Co)_xGeAs_2 Ferromagnetic Semiconductor: Magnetic and Transport Properties

100%

Kilanski L., Gorska M., Domukhovski V., Dobrowolski W., Anderson J., Rotundu C., Varniavskii S., Marenkin S.

Acta Physica Polonica A

2008

vol. 114

issue 5

1151-1157

We present the studies of magnetic and transport properties of the bulk Zn_{1-x}(Mn, Co)_xGeAs_2 mixed crystals with 0.052 ≤ x ≤0.182 grown using direct fusion method. Magnetic investigations showed that for samples with x ≥ 0.078 we observed a behavior typical of ferromagnets, with the Curie temperatures T_C ≥ 300 K. The observed ferromagnetism was probably connected with the spinodal decomposition of the Mn ions in the alloy. The transport studies including resistivity and Hall effect (at B=1.4 T) were performed. The samples showed p-type conductivity with semiconducting or metallic character, depending on the alloy composition. The Hall carrier concentration, p ≥ 10^{18} cm^{-3}, was composition dependent.

Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry

81%

Knoff W., Domukhovski V., Dybko K., Dziawa P., Górska M., Jakieła R., Łusakowska E., Taliashvili B., Story T., Reszka A., Anderson J., Rotundu C.

Acta Physica Polonica A

2008

vol. 114

issue 5

1159-1165

Magnetization of 1 μm thick ferromagnetic IV-VI (Ge, Mn)Te semiconductor layers with 10 at.% of Mn was studied by SQUID magnetometry method up to the magnetic fields of 70 kOe. The layers were grown on BaF₂ (111) substrates by molecular beam epitaxy with varying Te molecular flux, which permitted the control of layer stoichiometry and conducting hole concentration. X-ray diffraction and in situ electron diffraction characterization of layer growth and crystal structure revealed two-dimensional mode of growth and monocrystalline rhombohedral crystal structure of (Ge, Mn)Te layers. Controlling the layer stoichiometry influences the temperature dependence of magnetization with the ferromagnetic Curie temperature varying in Ge_{0.9}Mn_{0.1}Te layers from T_c=30 K (low Te flux) to T_c=42 K (high Te flux).

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2 Acta Physica Polonica A

2 2008

2 Anderson J.

2 Domukhovski V.

2 Rotundu C.

1 Dobrowolski W.

1 Dybko K.

1 Dziawa P.

1 Gorska M.

1 Górska M.

1 Jakieła R.

1 Kilanski L.

1 Knoff W.

1 Marenkin S.

1 Reszka A.

1 Story T.

1 Taliashvili B.

1 Varniavskii S.

1 Łusakowska E.

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Zn_{1-x}(Mn,Co)_xGeAs_2 Ferromagnetic Semiconductor: Magnetic and Transport Properties

Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry