Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 7

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
The optical absorption, emission spectra and luminescence decay kinetics under photoexcitation of Gd_{3}Ga_{5}O_{12} (GGG) garnet epitaxial films doped with Cr^{3+} ions and co-doped with Cr^{3+} and Mg^{2+} ions have been investigated. Luminescence of the GGG:Cr films due to ^{4}T_{2} → ^{4}A_{2} and ^{2}E → ^{4}A_{2} transitions in Cr^{3+} ions have been observed. Increase of the activator ions concentration has an influence on the intensity and decay time of Cr^{3+} ions photoluminescence. Introduction of the magnesium ions leads to partial transformation of chromium valence state (Cr^{3+} → Cr^{4+}) and to the appearance of a broad absorption band with the maximum at 860 nm. The narrow lines with luminescence maxima at 704 and 706 nm have arisen in the highly doped GGG:Cr,Mg films.
EN
The changes of the optical absorption spectra of Cr,Mg:YAG epitaxial film caused by high-temperature redox treatment are investigated by means of in situ spectroscopy. The spectra were registered in the visible and near-IR spectral regions at temperatures up to 1100 K. The kinetics of optical absorption changing were obtained in the temperature range from 936 K to 1091 K and were described by mathematical model connecting the chromium recharging process with oxygen vacancies diffusion. The parameters of the model were determined from the approximations of the experimental kinetics.
EN
The paper reports a growth of the high-quality Gd₃Ga₅O₁₂ (GGG) homoepitaxial films by the liquid phase epitaxy technique using the PbO-B₂O₃ and PbO-B₂O₃-V₂O₅ fluxes. The influence of the flux composition containing V₂O₅ as well as the growth temperature is discussed basing on the optical absorption and the electron probe micro analysis results.
EN
The problem of Q-switched microchip Nd^{3+}:YAG/Cr^{4+}:YAG laser optimization is considered. In accordance with requirements of laser location, the optimization consists in determination of such values of the saturable absorber (Cr^{4+}:YAG) thickness, the output laser mirror reflectivity and the pumping power, that ensure the generation of the sufficiently short ( ≈0.5 ns) laser pulses at the repetition rate of about 10 kHz and the peak power of about 1 kW or higher. Firstly, the dependences of the laser radiation parameters on the constructive ones are analyzed in the frames of Xiao-Bass model of Q-switched microchip laser. The obtained dependences are used for laser optimization. As it is shown, the parameters of laser radiation close to predominating ones are achieved at the absorber thickness of 140 μm, the output mirror reflectivity of 0.97 and the pumping power of 2.5 W.
EN
Most of the challenges in laser technology can be overcome by using yttrium-aluminum perovskite (YAlO_3, YAP). These crystals are characterized by more advantages than typical Y_3Al_{5}O_{12} (YAG) crystals. However, the creation of microlasers with these materials is just under development. The aim of the work was to theoretically design the input and output cavity mirrors for microlasers on the base of YAlO_3:Nd or YAlO_3:Tm single crystals, and to investigate those resonators obtained according to the theoretical design using electron beam evaporation method.
EN
Spatial changes of properties of Gd₃Ga₅O₁₂ (GGG) single crystals caused by diffusion of cobalt ions during high-temperature annealing (1200°C, 24 h) in Co₃O₄ powder are investigated. The registration of these changes was carried out by optical spectrophotometry, microscopy and micro-Raman scattering methods. Changes in structure of near-surface layers of the crystal were investigated by X-ray diffraction technique. It was shown that the additional absorption induced by annealing is related to intra-center optical transitions in Co²⁺ ions, which occupy tetrahedral positions in the garnet structure at the distances of 250-500 μm from the crystal surface. The dependence of induced absorption with depth has got a non-monotonous character with a maximum at 400 μm. A comparison of the results obtained by different methods allows to suppose that the thermal treatment of GGG in the presence of cobalt ions leads to formation of the structurally and chemically non-uniform layer with a width about 500 μm.
EN
Spatial changes of optical properties of bulk LiNbO₃ crystal were investigated after annealing in CuO powder. The incorporation of copper ions into the crystal was confirmed by registration of additional absorption spectra that revealed formation of the absorption bands of both Cu⁺ (400 nm) and Cu²⁺ (1000 nm) ions. The changes of optical absorption caused by thermal treatment were registered along the direction of diffusion by the probe beam perpendicular to this direction. The anisotropy of diffusion was revealed. The maxima were observed on the depth dependences of additional absorption both for the wavelengths of 400 and 1000 nm for all main crystallographic directions. The concentrations of copper ions were calculated in accordance with the Smakula-Dexter formula. The X-ray diffraction study revealed reflexes which probably belong to CuNb₂O₆, CuNbO₃ and CuO. The halo was observed on these diffraction patterns that confirms the formation of the scattering centers (about 1 nm in diameter) in the near-surface region.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.