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1
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Optical Absorption and Reflection Studies of Tl_4InGa_3S_8 Layered Single Crystals

100%
Goksen K., Gasanly N., Ozkan H.
Acta Physica Polonica A
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2007
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vol. 112
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issue 1
93-100
EN
The optical properties of Tl_4InGa_3S_8 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature asγ=-6.0×10^{-4} eV/K. The absolute zero value of the band gap energy was obtained as E_{gi}(0)= 2.52 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength, and zero-frequency refractive index were found to be 5.07 eV, 26.67 eV, 8.82×10^{13} m^{-2}, and 2.50, respectively.
2
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Trapping Center Parameters in TlInS_2 Layered Crystals by Thermally Stimulated Current Measurements

100%
Yuksek N., Gasanly N., Ozkan H., Karci O.
Acta Physica Polonica A
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2004
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vol. 106
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issue 1
95-103
EN
Thermally stimulated current measure ments are carried out on TlInS_2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS_2 crystal in the low-temperature region.
3
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Deep Traps Distribution in TlInS_2 Layered Crystals

100%
Isik M., Gasanly N., Ozkan H.
Acta Physica Polonica A
|
2009
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vol. 115
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issue 3
732-737
EN
The trap centers and distributions in TlInS_2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × 10^{-16}, 2.7× 10^{-12}, and 1.8× 10^{-11} cm^{2}, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.
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