This paper reviews the background of modulation spectroscopy, particularly electromodulation, presents some recent room temperature results having both fundamental and technological significance, including two-dimensional electron gas effects in modulation-doped, pseudomorphic GaAlAs/InGaAs/GaAs single quantum wells (HΕΜΤ structures), quantum well laser structures and process-induced damage in quantum dot arrays fabricated by reactive ion etching.
We report a systematic study of the temperature variation of the energy [E_{0}(T)] and broadening parameter [Γ_{0}(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E_{0}(T) and Γ_{0}(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E_{0}(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers.
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