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Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices

100%

Sadowski J., Mathieu R., Svedlindh P., Kanski J., Karlsteen M., Świątek K., Domagała J.

issue 4-5

687-694

We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12Å or 24Å). The non-magnetic InGaAs spacer layers are 12Å thick. The composition (In content) in InGaMnAs and InGaAs was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers, or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs non-magnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.

MBE Growth and Properties of GaMnAs(100) Films

100%

Sadowski J., Domagała J., Bąk- Misiuk J., Świątek K., Kanski J., Ilver L., Oscarsson H.

Acta Physica Polonica A

1998

vol. 94

issue 3

509-513

We present here the results of measurements of structural and electronic properties of GaMnAs - a new diluted magnetic semiconductor system. This ternary III-V-Mn compound with the Mn content as high as 7% was obtained for the first time (by means of molecular beam epitaxial growth) by Ohno, Munekata et al. and the studies of its properties are not completed until now. We did the high resolution X-ray diffraction investigations and photoemission measurements of the samples with Mn content varied from about 0.1% up to 5%. The crystalline perfection of the ternary GaMnAs compound is very high - full width at half maximum of GaMnAs (400) Bragg reflections are of order of 50 arcseconds and the layers are fully strained to the GaAs(100) substrate. In photoemission experiments we traced the contribution of Mn 3d states to the band structure of GaMnAs ternary compound.

Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs

84%

Sadowski J., Kanski J., Adell M., Domagała J., Janik E., Łusakowska E., Brucas R., Hanson M.

Acta Physica Polonica A

2005

vol. 108

issue 5

851-858

We show that post growth annealing of GaMnAs under As capping at temperatures in the range of 180-210ºC leads to significant surface modifications. Depending on GaMnAs layer thickness and composition, we obtain either a smooth continuous reacted (MnAs) surface layer or 3D islands (quantum dots). The surface modifications are due to a solid phase epitaxial process, in which Mn interstitials diffusing to the GaMnAs surface are bound with the As.

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3 Acta Physica Polonica A

1 2005

1 2002

1 1998

3 Domagała J.

3 Kanski J.

3 Sadowski J.

2 Świątek K.

1 Adell M.

1 Brucas R.

1 Bąk- Misiuk J.

1 Hanson M.

1 Ilver L.

1 Janik E.

1 Karlsteen M.

1 Mathieu R.

1 Oscarsson H.

1 Svedlindh P.

1 Łusakowska E.

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Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices

MBE Growth and Properties of GaMnAs(100) Films

Solid Phase Epitaxy of Ferromagnetic MnAs Layer and Quantum Dots on Annealed GaMnAs