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1
Content available remote

Surface Morphological Properties of Mo-Based Thin Films on Glass

100%
Tashlykov I., Turavets A., Zukowski P.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
840-842
EN
In that report we observe the initial stages in the process of film growth at different irradiation doses. Investigations of influence of Mo deposition on glass substrates by means of self-ion-assisted deposition on its topography (atomic force microscopy) and wettability (sessile-drop method) were carried out. It was found out that with an increase of the irradiation dose, the average roughness and the contact angle increases rapidly at first and then decrease. 2.45-2.77 increase in the contact angle of water when Mo-based coating was deposited on the glass was observed.
2
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The Kinetics of the Change of SnO_{x} Thin Films Conductivity during the Gas-Adsorptive Interaction

100%
Zarapin V., Luhin V., Zukowski P., Koltunowicz T.
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vol. 125
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issue 6
1319-1323
EN
The subjects of investigation are thin semiconductor SnO_{x} films received by thermal oxidation. The influence of gas environments on electrical conductivity of films were investigated by a static way by measurement of kinetic and equilibrium isotherm of adsorption of trimethylamine, alcohol, hydrogen sulfide and ammonia. The communication between a type isotherm of adsorption, chemical nature of gas and temperature is shown.
3
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Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition

100%
Ksenevich V., Adamchuk D., Odzhaev V., Zukowski P.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
861-863
EN
Tin dioxide films with variable stoichiometric composition were fabricated by means of dc magnetron sputtering followed by a 2-stage annealing process. The structural and electrical properties of tin dioxide films were investigated by means of the Raman spectroscopy and impedance spectroscopy, respectively. It was found that crystallinity and grain size of tin dioxide films increase with the increasing annealing temperature. The most conductive samples were obtained at the annealing temperature 375°C. Increasing of the impedance of films annealed at higher temperatures is explained by decrease of the concentration of oxygen vacancies.
4
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Surface Composition of CIS Compound Affected by Xe⁺ Irradiation

100%
Tashlykov I., Zukowski P., Silvanovich D., Gremenok V.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
927-930
EN
The paper presents the results of investigation of element composition of CuInSe₂ (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.
5
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Spin-Polarized and Normal Hopping Magnetoresistance in Heavily Doped Silicon

88%
Fedotov A., Prischepa S., Danilyuk A., Svito I., Zukowski P.
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vol. 125
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issue 6
1271-1275
EN
Investigation of electrical resistivity ρ and magnetoresistance in single crystalline n-type silicon heavily doped with antimony in the temperature range ΔT=5-300 K and at the magnetic inductance B up to 8 T was performed. It was established that, for the temperature range ΔT=25-300 K the conductivity is of activation type, while for ΔT=5-25 K it is of variable range hopping and is described by the Mott law. Parameters of the Mott hopping were calculated. It was shown that, to explain the experimental data, the spin polarized hopping via the occupied states has to be taken into account. The obtained parameters revealed that for the low temperature range ΔT=5-11 K the spin polarized hopping dominates, while for ΔT=11-20 K the spin polarized transport is accompanied by the wave function contraction.
6
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Application of HPLC-MS with Electrospray Ionization for the Qualitative and Quantitative Analysis of Antibiotics in Pharmaceutical Formulation

88%
Likhtarovich A., Luhin V., Sovastei O., Zukowski P., Dado M.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
901-904
EN
This study describes the application of electrospray ionization mass spectrometry in order to identify ten antibiotics (macrolides, penicillins, aminoglycosides). An optimum procedure was developed for determination of antibiotics of different grade. Positive ion spectra of most antibiotics are higher in intensity including an [M+H]⁺ ion and produce less fragmentation and are more informative compared to the negative ion spectra. The group of antibiotics exhibits the same characteristic fragmentation. The data base was developed for identification of antibiotics comparing of their molecular and fragment ions. The results of the study showed that the method with electrospray ionization is simple and quick which is useful in the routine determination of antibiotics and in their pharmaceutical dosage forms.
7
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Percolation Phenomena in Cu_{x}(SiO_{y})_{100-x} Nanocomposite Films Produced by Ion Beam-Sputtering

88%
Koltunowicz T., Zukowski P., Czarnacka K., Svito I., Fedotov A.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
908-911
EN
In this paper the results of examinations of nanocomposites Cu_{x}(SiO_{y})_{100-x} produced by ion beam sputtering using argon ions were presented. The examinations were performed by the use of ac devices for measuring frequency in the range 50 Hz-1 MHz and temperatures from 81 K to 273 K. The measurements were performed for the samples directly after production. Based on temperature dependences of conductivity σ , which were determined at the frequency 100 Hz, the Arrhenius graphs were prepared. From these graphs conductivity activation energies ΔE were calculated. Dependences of conductivity and activation energy of electrons on the metallic phase content x at the frequency 100 Hz were determined. Analysis of the obtained dependences shows that conductivity is a parabolic function of the metallic phase content x in nanocomposites. Changes of activation energies of nanocomposites, in which metallic phase contents are in the ranges x < 12 at.% and x > 68 at.%, demonstrate negative values - metallic type of conductivity. In the range 12 at.% < x < 68 at.% activation energies have positive values - the dielectric type of conductivity. It was established that for the metallic phase content of about 68 at.% the real percolation threshold occurs, and the conduction changes from dielectric to metallic type.
8
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Ion Beam Formation of Electrocatalysts for Direct Methanol and Ethanol Fuel Cells on the Basis of Carbon Catalyst Supports

76%
Poplavsky V., Dorozhko A., Luhin V., Matys V., Zukowski P., Czarnacka K.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
278-282
EN
Ion-beam modification of materials whose service properties are mainly controlled by the surface composition is of especial interest, in particular, for electrocatalysts, namely electrodes of fuel cells - perspective chemical current sources. A catalyst is needed for effective operation of fuel cell. In this paper active layers of the electrocatalysts were prepared by ion beam assisted deposition of catalytic (platinum) and activating (cerium) metals onto carbon (AVCarb® Carbon Fiber Paper P50 and Toray Carbon Fiber Paper TGP-H-060 T) catalyst supports. Formation of layers by ion beam assisted deposition by means of the deposition of metal and mixing of precipitating layer with the substrate by accelerated ions of the same metal, was carried out. Metal deposition and mixing between the precipitable layer and surface of the substrate by accelerated (U=10 kV) ions of the same metal were conducted from a neutral vapor fraction and plasma of vacuum arc discharge of a pulsed electric arc ion source. Study of the morphology and composition of layers was carried out by the scanning electron microscopy, energy dispersive X-ray microanalysis, X-ray fluorescence analysis, and the Rutherford backscattering spectrometry methods. According to the investigations with the use of cyclic voltammetry, the electrocatalysts with the prepared layers exhibited catalytic activity in the reactions of electrochemical oxidation of methanol and ethanol, which form the basis for the principle of operation of low temperature direct methanol and direct ethanol fuel cells.
9
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Low-Temperature DC Carrier Transport in (Co_{0.45}Fe_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1-x} Nanocomposites Sputtered in Mixed Argon-Oxygen Atmosphere

76%
Svito I., Fedotov A., Saad A., Koltunowicz T., Zukowski P., Bury P.
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vol. 125
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issue 6
1351-1355
EN
This paper studies the temperature dependences (2 < T < 300 K) of the DC conductivity σ(T) for the (Co_{0.45}Fe_{0.45}Zr_{0.10})_x(Al_2O_3)_{1-x} nanocomposites (30 < x < 65 at.%) sputtered in Ar + O_2 atmosphere. It is shown that at temperatures lower than 100-150 K dependences of DC conductance on temperature for all the studied samples are due to the Shklovski-Efros variable range hopping mechanism. It was also observed that σ(x,T) dependences can be attributed to the formation of FeCo-based oxide "shells" around metallic alloy nanoparticles due to incorporation of oxygen in the vacuum chamber during the deposition procedure.
10
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Admittance and Permittivity in Doped Layered TlGaSe_2 Single Crystals

76%
Dawood S., Fedotov A., Mammadov T., Zukowski P., Koltunowicz T., Saad A., Drozdov N.
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vol. 125
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issue 6
1267-1271
EN
In doped TlGaSe_2 crystals the phase transitions at low temperatures (100-170 K) were observed using admittance and dielectric spectroscopy in a temperature range of 80-320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations N_{imp} < 0.5 at.% nonequilibrium electronic phase transition is observed. Doping with N_{imp} > 0.5 at.% resulted in full suppression of this phase transition presence.
11
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Voltage and Current Resonance in Nanocomposite (FeCoZr)_x(CaF₂)_{100-x} Produced by Ion-Beam Sputtering in Pure Argon Atmosphere

76%
Koltunowicz T., Zukowski P., Bondariev V., Fedotov A., Svito I., Fedotova J., Saad A.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
897-900
EN
In this paper the results of investigations of electrical properties of metal-dielectric nanocomposites (FeCoZr)_x(CaF₂)_{100-x} are presented. The samples with the metallic phase content x=45.7 at.% were produced by ion-beam sputtering method in pure argon atmosphere, and subsequently annealed at 398 K for 15 min. The measurements of electrical properties were performed in the frequency range from 50 Hz to 1 MHz. The frequency dependences of phase angle θ, capacity C_{p}, conductivity σ and dielectric loss factor tanδ were measured at seven different temperatures ranging from 148 K to 263 K. It was found that the nanocomposite exhibits the phenomena of voltage resonance and current resonance, characteristic of the conventional RLC circuits with series and parallel connections of elements.
12
Content available remote

Investigation of Nanoscale TiN/MoN Multilayered Systems, Fabricated Using Arc Evaporation

64%
Pogrebnjak A., Bondar O., Abadias G., Eyidi D., Beresnev V., Sobol O., Postolnyi B., Zukowski P.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
836-840
EN
Using the vacuum-arc evaporation method we fabricated periodic multilayered TiN/MoN structures with different bilayer periods λ ranging from 8 to 100 nm. We found that molybdenum nitride and titanium nitride layers grown on steel show local partial epitaxy and columnar growth across interfaces. A molybdenum-titanium carbide interlayer was evidenced between the substrate and the multilayer. Molybdenum nitride and titanium nitride layers contain small (5÷30 nm) grains and are well crystallized with (100) preferred orientation. They were identified as stoichiometric fcc TiN and cubic γ-M₂N. Non-cubic molybdenum nitride phases were also detected. The hardness of the obtained structures achieved great values and maximal hardness was 31÷41.8 GPa for the multilayered structure with a 8 nm period. Hardness of the obtained coatings is 25÷45% higher in comparison with the initial single-layer nitride coatings, plasticity index of multilayered structure is 0.075.
13
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Thermoelectric Properties of Ca_3Co_4O_9-Based Ceramics Doped with Fe and/or Y

64%
Fedotov A., Fedotov A., Mazanik A., Svito I., Saad A., Troyanchuk I., Bushinski M., Fedotova V., Zukowski P., Koltunowicz T.
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vol. 125
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issue 6
1344-1347
EN
We describe here structure and temperature dependences of conductivity σ(T), the Seebeck coefficient α(T), thermal conductivity λ(T) and figure-of-merit ZT(T) in Ca_3Co_4O_9 ceramics, doped with Fe and Y, depending on compacting pressure (0.2 or 6 MPa) and temperature (300 < T < 700 K). It is shown that introduction of iron and yttrium to ceramics does not alter the crystalline structure of the material. Increasing the pressure in the compacting process before the additional diffusion annealing leads to a smaller-grained structure and increase σ and λ due to reducing of the synthesized samples porosity. The Seebeck coefficients of nanocomposite ceramics Ca_3Co_{3.9}Fe_{0.1}O_9 and (Ca_{2.9}Y_{0.1})(Co_{3.9}Fe_{0.1})O_9 have linear dependences on temperature is not changed after increase of compacting pressure. Electrical-to-heat conductivity ratio (σ/λ) for the samples compacted at high (6 GPa) pressure increases not more than 20-30% in comparison with ones compacted at low (0.2 GPa) pressure, whereby ZT is increased more than 50%. The main reason for this effect is samples porosity reduction with the compacting pressure increase.
14
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Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification

64%
Fedotov A., Skuratov V., Yurasov D., Novikov A., Svito I., Apel P., Fedotov A., Zukowski P., Fedotova V.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
229-232
EN
In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.
15
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Fabrication and Research of Superhard (Zr-Ti-Cr-Nb)N Coatings

64%
Bondar O., Postolnyi B., Kravchenko Y., Shypylenko A., Sobol O., Beresnev V., Kuzmenko A., Zukowski P.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
867-870
EN
This work presents the results of (Zr-Ti-Cr-Nb)N superhard coatings research. The samples were fabricated by the vacuum-arc deposition method (Arc-PVD). Structure, composition and properties of these coatings were studied. The study of coatings was carried out using scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction. Hardness measurements and adhesion tests were performed. The coatings thickness was up to 6.2 μ m, nanocrystallites sizes ranged from 4 to 7.3 nm. Values of hardness and cohesive strength were H=43.7 GPa and L_{C}=62.06 N, respectively. The optimal conditions for coating deposition were found.
16
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Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

64%
Komarov F., Vlasukova L., Milchanin O., Greben M., Parkhomenko I., Mudryi A., Wendler E., Zukowski P.
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vol. 125
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issue 6
1288-1292
EN
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
17
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Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification

64%
Fedotova J., Ivanou D., Mazanik A., Svito I., Streltsov E., Saad A., Zukowski P., Fedotov A., Bury P., Apel P.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
894-896
EN
In this work anisotropic magnetoresistance in nanogranular Ni films and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic field. To produce Ni films and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO₂ layer on the Si substrate. To produce mesopores in SiO₂ layer, SiO₂/Si template was irradiated by a scanned beam of swift heavy 350 MeV ¹⁹⁷Au²⁶⁺ ions with a fluence of 5×10⁸ cm¯² and then chemically etched in diluted hydrofluoric acid. Pores, randomly distributed in the template have diameters of 100-250 nm and heights about 400-500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni films and n-Si/SiO₂/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic field and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO₂/Ni nanostructures can be controlled not only by electric field applied along Si substrate but also by additionally applied transversal bias voltage.
18
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Multilayered Nano-Microcomposite Ti-Al-N/TiN/Al_2O_3 Coatings. Their Structure and Properties

52%
Pogrebnjak A., Shpak A., Kirik G., Erdybaeva N., Il'yashenko M., Dem'yanenko A., Kunitskii Y., Kaverina A., Baidak V., Makhmudov N., Zukowski P., Komarov F., Beresnev V., Ruzimov S., Shypylenko A.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
94-99
EN
This paper presents the first results on formation and study of structure and properties of micro- and nanocomposite combined coatings. By means of modeling the deposition processes (deposition conditions, current density-discharge, plasma composition and density, voltage) we formed the three-layer nanocomposite coatings of Ti-Al-N/Ti-N/Al_2O_3. The coating composition, structure and properties were studied using physical and nuclear-physical methods. The Rutherford proton and helium ion backscattering, scanning electron microscopy with microanalysis, grazing incidence X-ray diffraction, as well as nanohardness tests (hardness) were used. Measurements of wear resistance and corrosion resistance in NaCl, HCl and H_2SO_4 solutions were also performed. For testing mechanical properties such characteristics of layered structures as hardness H, elastic modulus E: H^3/E^2 etc. were measured. It is demonstrated that the formed three-layer nanocomposite coatings have hardness of 32 to 36 GPa and elastic modulus of 328 ± 18 to 364 ± 14 GPa. Its wear resistance (cylinder-surface friction) increased by factor of 17 to 25 in comparison with the substrate (stainless steel). The layers thickness was in the range of 56-120 μm.
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