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issue 5
738-739
EN
We have studied the effect of thermal treatment on amorphous glass-coated Fe_{40}Si_{7.5}B_{15} microwires. This microwire is characterized by transverse domain wall regime only, with maximum domain wall velocity of about 1500 m/s. Annealing at 200°C slightly increases its transverse domain wall velocity, probably due to the reduction of mechanical stresses during the thermal annealing. Annealing at 300°C leads to drastical increase of domain wall mobility and domain wall velocity of the transverse domain wall up to 2500 m/s. Moreover, vortex regime appears in this case. Thanks to it, maximum domain wall velocity of around 5000 m/s was observed.
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issue 5
747-748
EN
Here, we present the domain wall dynamics in thin magnetic wires that exhibit even negative mobility regime. Such a regime is well below the Walker limit and is a result of structural relaxation. It disappears at high frequencies and it can be enhanced by application of mechanical stress. Moreover, the domain wall velocity was found to be almost field-independent at certain measuring conditions. Anyway, the domain wall velocity remains quite high (> 450 m/s) in this regime.
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issue 5
807-808
EN
We have studied the magnetization process in amorphous Fe_{49.6}Ni_{27.9}Si_{7.5}B_{15} microwire. It was found that the hysteresis mechanism consists of two contributions: magnetoelastic and structural relaxation. It was shown that at low frequencies, the magnetization process is controlled mainly by the structural relaxation. At higher frequencies (above 50 Hz), the relaxation effect disappears and switching field is determined mainly by the magnetoelastic contribution. Moreover, the effect of thermal treatment at temperature 300°C has been studied. As-cast microwire is almost unsensible to the applied tensile stress since the applied stresses are lower than that induced during production. After annealing, the stresses relax and stress sensibility of microwires increases.
EN
In this work we studied influence of time and temperature of stress annealing on magnetic properties of amorphous Co-based and CoFeNi-based microwires. We showed that this type of treatment can be very effective for manipulation of magnetic properties of amorphous ferromagnetic glass-coated microwires. Co-based microwires keep S-shape hysteresis loop after any annealing. Annealing of Co-based microwires at different conditions allows tailoring of the saturation field. CoFeNi-based microwires present either S-shape or rectangular shape of the hysteresis loops depending on the value of the axial stress during the annealing. We demonstrated the possibility to change the switching field of microwires with acquired bistability in the range from 0.5 to 25 A/m.
EN
We have studied the effect of annealing conditions on magnetic properties of amorphous CoFeNi-based glass-coated microwires. We show that annealing can be very effective for manipulation the magnetic properties of amorphous ferromagnetic glass-coated microwires. Low coercivity and high giant magnetoimpedance (GMI) effect have been observed in as-prepared Co-rich microwires. After annealing of Co-rich microwires we can observe transformation of inclined hysteresis loops into rectangular and coexistence of fast magnetization switching and GMI effect in the same sample. We demonstrate that the switching field value of microwires can be tailored by annealing in the range from 4 to 200 A/m.
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Domain Wall Dynamics in Amorphous Microwires

88%
EN
Here we present the domain wall dynamics in FeNi-based microwires with positive magnetostriction. Two different ranges were found which differs by the measured domain wall mobility. At low fields, the domain wall dynamics exhibit small mobility, whereas at higher field the domain wall mobility increases. The difference in the two regimes of the domain wall dynamics is treated in terms of the different domain wall structure. At low fields, the transversal domain wall is expected, with low domain wall mobility. At high field, the vortex-type domain wall with high domain wall mobility is created.
EN
We report on structural and magnetic properties of glass-coated microwires of Ni-Mn-Ga-based Heusler alloys. Structural characterization of the as-prepared microwires revealed that they have a cubic structure at room temperature. It is shown that magnetic properties of microwires can be tailored by heat treatment as well as by removing the glass coating. Specifically, annealing of the microwires has a marked influence of the Curie temperature T_{C} which increases significatly in the heat-treated samples. Release of internal stresses in the microwires by removing the glass coating causes magnetization and the Curie temperature to decrease. This allowed us to conclude that in the studied microwires the magnetostriction constant is positive and estimate the value of internal stresses as being roughly equal to 1.5 GPa.
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Fast Magnetization Switching in Amorphous Microwires

76%
EN
We studied the magnetization switching in magnetically bistable amorphous ferromagnetic microwires. We observed quite fast domain wall propagation along the microwires and a correlation between the magnetoelastic anisotropy, distribution of the local nucleation field along the length of microwire and the domain wall dynamics. We observed that both DW velocity and the range of fields, limiting single DW dynamics, can be manipulated by internal or applied stresses and by annealing. We also observed that under certain conditions a controllable domain wall (DW) collision can be realized in different parts of the wire, and that it is possible to manipulate the DW dynamics in a field-driven regime.
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76%
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vol. 126
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issue 1
196-197
EN
We report on the basic magnetic properties of glass-coated Co_2MnSi Heusler microwires. Measurements of hysteresis loops in different directions show that easy magnetization axis coincides with the wire's axis. The frequency dependence of the coercive field has been measured at room temperature in the frequency range from 10 Hz to 10 kHz. The coercivity decreases with the frequency up to 100 Hz and then increases linearly up to 1 kHz.
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76%
EN
We present an overview of the factors affecting soft magnetic properties, fast domain wall propagation and giant magnetoimpedance (GMI) effect in thin amorphous wires. The magnetoelastic anisotropy is one of the most important parameters that determine the magnetic properties of glass-coated microwires and therefore annealing can be very effective for manipulation the magnetic properties of amorphous ferromagnetic glass-coated microwires. Increasing of DW velocity in Fe-rich and Fe-Ni based (low Ni content) microwires is achieved after annealing. After heat treatment of Co-rich microwires we can observe transformation of inclined hysteresis loops to rectangular and coexistence of fast magnetization switching and GMI effect in the same sample. On the other hand stress annealing of Fe- and Co-rich microwires allows achievement of considerable magnetic softening and GMI effect enhancement.
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Susceptibility Spectroscopy in FeNiSiB Microwires

64%
EN
Here, we present the study on the influence of the Ni content on the magnetization processes of the amorphous glass-coated Fe_{77.5-x}Ni_xSi_{7.5}B_{15} (x = 0-40) microwires. Measurement of the amplitude dependence of the complex susceptibility was used to observe the magnetization process. It is shown that the magnetization process in the presented samples runs mainly through the domain wall motion.
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Ni_2FeSi Heusler Glass Coated Microwires

64%
EN
We report on fabrication, structural and magnetic properties of novel Heusler-type glass coated Ni₂FeSi microwires that were prepared by the Taylor-Ulitovsky method, having a metallic nucleus diameter about 3.9 μm and total sample diameter of 39 μm. This single step and low cost fabrication technique offers to prepare up to km of glass-coated microwires starting from few g of cheap elements for diverse applications. The X-ray diffraction data from the metallic nucleus indicates L2₁ crystalline structure (a=5.563 Å), with a possible DO3 disorder. Magnetic measurements determined the Curie temperature well above the room temperature (770 K) together with uniform easy magnetization axis of the metallic core, which predisposes this material to a suitable candidate for spintronic applications.
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Ribbons of composition Co₄₉Ni₂Ga₃₀ have been prepared by melt-spinning method. X-ray diffraction investigation revealed single phase with B2 structure at room temperature. However, analysis of magnetization dependence of temperature suggests phase transition in the range 150-250 K. Resistivity measurements revealed similar transition with shift to higher temperatures in the presence of magnetic field.
EN
We studied magnetic properties and GMI effect of Finemet-type FeCuNbSiB microwires. We observed that GMI effect and magnetic softness of microwires produced by the Taylor-Ulitovski technique, can be tailored by either controlling magnetoelastic anisotropy of as-prepared FeCuNbSiB microwires or controlling their structure by heat treatment or changing the fabrication conditions. GMI effect has been observed in as-prepared Fe-rich microwires with nanocrystalline structure.
EN
We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
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