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In the resonant tunneling diode incorporating a wide one-sided spacer layer, an oscillation picture has been studied in both polarities of the applied voltage in high magnetic field. The results lead to the conclusion that the interference between the electron waves running in the forward direction and the ones reflected at some potential step can occur in both the emitter and collector regions. The characteristic lengths corresponding to the path of the ballistic motion of electrons were estimated. An exchange enhancement of the electronic g-factor in two-dimensional systems was observed.
EN
New measurements of the Shubnikov-de Haas (SdH) effect in semimagnetic semiconductor (SMSC) Cd_{3-x-y}Zn_{x}Mn_{y}As_{2} with x = 0.09 and y = 0.018, using continuous magnetic fields up to 25 T, are presented. The observed modulation of the amplitudes of the first and second SdH harmonics as a function of magnetic field is interpreted in terms of the three band Kane model with the exchange interaction included and taking into account the spin-dependent scattering which appears to be particularly important at high magnetic fields.
EN
Magnetoconductance measurements on submicron wires of n^{+}-Cd_{1-x}Mn_{x}Te were carried out up to 27 T and down to 100 mK. The inverse correlation field of the universal conductance fluctuations is found to increase abruptly in the vicinity of the magnetization steps due to Mn pairs in CdMnTe. No such effect is observed in similar wires of CdTe. These findings support a recent model, according to which the correlation field of the universal conductance fluctuations in magnetic systems is inversely proportional to the magnetic susceptibility of the localized spins.
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